Question

5. You are given a MOSFET biased as shown in the figure. i) Sketch the drain current Ip when Vo is ramped up from 0V to 3 V in a log scale. log(ID ↑ I, 2 0 ) The MOSFET has switched through different operation regions (inear, saturation, subthreshold) during the ramp-up ii) The MOSFET has swit Label the different regions in the graph as you plot the curve above. iii) In dicate the values Vo's that mark the different operation regions. 1um, W 10 um, NA- 2x10'7 cm3. The flat-band v. e 11.9 Consider a n-channel n-polysilicon-SiO2-Si MOSFET with L 1pm W 10 μm, N 2 voltage is -1.2V, Cox 3.45 x 10-7 F/cm2. Calculate the threshold voltage and find IpSa for Vo- x 8.85 x 10-14 F/cm?, n, - 9. 65 x 10 cm, Hn 800cm2/(V*S) 5V. (E a MOSFET has a threshold voltage of VT 0.6 V, a subthreshold swing of 80 mV/decade, and a drain current uA at Vr. What is the subthreshold leakage current at VG 0.

Answer 1

MOSFFT blased as Pollous Td Vos - is fiaed ohen To is plolled as unc of Vqs ㄒ : Boll 4mann's constant satanahorn lo neas ID 10 eeyon 0.t 2-

eede Sub Phseshold Suetn l 0 100 x 10-10