Question

Question 2: a) Find the value of Vgs? b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) v,= 10V SATE e) Write the formula to calculate Current (ID) for the circuit in Figure 1 Fig. 1 Question 3: a) Find the value of Vgs* b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) c) Write the formula to calculate Current (ID) for the circuit in Figure 2 10V V BAT R1 neg Fig. 2 Question 4 a) Find the value of Ves BATE b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Soturation. Cutafh Fig. 2 Question 4: a) Find the value of Vs ML b)If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) e) Write the formula to calculate Current (ID) for the circuit in Figure 3. Fig.3 Question 5: V5V a) Find the value of Vos* b) Find the value of V e) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) d Write the formula to calculate Current (I) for GS sad DS the circuit in Figure 4. Fig. 4 Question 6 a) What is channel length modulation? b) Draw the large signal model of a MOSFET when channel length modulation 0 e Draw the large signal model of a MOSFET when channel length modulation 10 Question 7: A 0.18-um fabrication process is specified to have t= 4 nm, ,450 cm/V-s, and V, 0.5 V Find the value of the process transconductance parameter k. For a MOSFET with minimum length fabricated in this process, find the required value of W so that the device exhibits a channel resistance F of I k2 at vasIV Lecture Summary We discussed MOSFET biasing and different regions of operations. We further discussed IV characteristics of ideal and non-ideal MOSFET . Channel length modulation and effect of channel length modulation on current ID was also discussed during the lectures. Question 2 a) Find the value of Vgs? b) If the threshold voltage of the NMOS = 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) e) Write the formula to calculate Current (ID) for the circuit in Figure 1 R2 100 C BAT2 81 100 0 Fig. Question 3 VD a) Find the value of Vgs b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e Triode, Saturation or Cutoff) e) Write the formula to calculate Current (ID) for the circuit in Figure 2 10V NMOS G BAT2 R1 100 Question 4: a) Find the value of Vos b) If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) e) Write the formula to calculate Current (ID) for the circuit in Figure 3. Fig. 3 Question 5: 5V a)Find the value of VGs bFind the value of Vps e)If the threshold voltage of the NMOS 0.7V, identify the region of operation for the MOSFET (i.e. Triode, Saturation or Cutoff) d) Write the formula to calculate Current (I,) for the circuit in Figure 4 v ov Fig. 4 Question 6 a) What is channel length modulation? b) Draw the large signal model of a MOSFET when channel length modulation = 0. c) Draw the large signal model of a MOSFET when channel length modulation 1 0 Question 7: A 0.18-jum fabrication process is specified to have =4 nm, ,= 450 cm N-s, and V,= 05 V Find the value of the process transconductance parameterk. For a MOSFET with minimum length fabricated in this process, find the required value of W so that the device exhibits a channel resistance os of 1 k2 at v IV

Answer 1

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