2. Square-law theory of the MOSFET Biases VGs 3 V and Vbs 0 V are applied to an ideal n-channel MOSFET with W 70 um, L-7m, An 550 cm2/V.s, tox 50 nm, and V 1 V. Making use of the square-lavw theo...
Problem 3 An n-channel MOSFET with L=1 um, W=3 um, tox=20 nm, V=0.7 V, and an effective electron mobility in the channel of 650 cm/V-s. a) If the MOSFET is biased with VG-V=3V, and Vp=2V, what is the drain current and transconductance of this MOSFET? b) Assume long channel theory is valid, what are (i) the velocities of channel carriers at the source and drain? (ii) the output resistance of the MOSFET? c) Plot channel conductance (ga) versus VG for...
The ID–VDS of a 1980s vintage (but “ideal”) N-MOSFET is shown in the figure. The VT = 1 V, tox = 100 nm (SiO2) and the source is grounded. (a) What regions of operation do points (1), (2), and (3) correspond to? (b) What is the applied gate voltage? (c) What is the inversion charge density (in electrons per cm2) at the source end of the channel, n(y = 0), and at the drain end of the channel, n(y =...