Question

HOME INSERT DESIGN PAGE LAYOUT REFERENCES MAILINGS REVIEW VIEW LE Alexander Zaitsev Final Test ENS345, Spring 2019 1. At a forward voltage of 2 V, the current density in a symmetric p-n diode is 10A/cm2. Estimate concentration of doping in this diode. 2. A silicon BIT with De = 10 cm2/s, DF 40 cm2/s, We = 100 nm, wa-50 nm, Na = 1017 crm-3, NE-1020cm -3 has a 0.99. Estimate bandgap width of the base of this transistor. 3. A nMOSFET with 200 nm long channel and 5 nm thick gate oxide is made on silicon substrate doped with a concentration of 1017 cm3. Find channel width, and saturation current at gate voltage 10 V of this transistor if its transconductance is 5 mA/V. 4.

Qno2 only

Answer 1

ANSWER: α 6,99 a- 99 992 2- /o3 i B n/ B Mie

rJOw le 0.18s e 26 x 1,6709 meV s 43. 44 mev