Problem 2 (10 points) For a 1 cm intrinsic Germanium crystal, at liquid nitrogen temperature (77K...
Problem 1 Using what we have leamed in chapter 1, derive, for a semiconductor, the expressions of The total current density Conductivity - Problem 2 Consider Germanium sample with the following characteristics the electron and hole mobility for Ge is 0.39 and 0.19 m2N.s The electron and hole effectives masses are 0.56me and 0.4 me The energy gap is 0.67 eV at T-27°C 1) 2) Find the intrinsic carrier concentration for Ge What is the resistivity of the Ge sample...
Problem 7 A germanium sample is doped with donors at a level 2 times 10^14/cm^3 and no acceptors. Given that n_i = 2.4 times 10^13/cm^3 at 300K: Find the thermal equilibrium electron and hole concentrations at 250K. Repeat part a) for 350K. Speculate on what happens to very low doped materials as temperature increases.
1.) Determine the intrinsic carrier density in Germanium and Gallium Arsenide at 27°C The mass of a free electron, mo 9.11 x 10 kg . The Planck's constant, h 6.626 x 10-4J-s or 4.14 x 10s eV-s . The Boltzmann's constant, k 1.38 x 10-23 J/K or 8.617 x 10° eV/K Symbol Germanium Silicon Gallium Arsenide E, (eV)1 0.66 Bandgap energy at 300 K The effective mass of the electrons l m、! 0.55m The effective mass of the holes ma0.37mo...
Please help me out.. Need to pass this course as a removal for my other course.. Si material parameters: Band gap energy at 300 K: Eg = 1.124 eV Relative permittivity: x = 11.7 Effective mass of electron: m =1.08m for density of states, Effective mass of hole: m = 0.81m for density of states, m = 0.26m for conductivity m =0.39m for conductivity Up = 470 cm/V.s Mobility: Un = 1400 cm /V-s, Diffusion coefficient: Do = 36 cm²/s,...
Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...
5) A Si solar cell with junction cross sectional dimensions 2 cm ×2 cmis formed with Na 1018 cm3 on the p side and Nd 1018cm3 on the n side. It is operated at a temperature of 300 K and τn-tp-1 μ. a) Using the mobilities on the equation sheet, calculate the dark saturation current. b) An intrinsic region of thickness 200 μm is sandwiched between the p and n regions in order to enhance the active volume of the...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...