N_As = 6 x10^(+15) atoms/cm^3
N_B = 900 x10^(+12) atoms/cm^3
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N_As = 6 x10^(+15) atoms/cm^3
N_B = 900 x10^(+12) atoms/cm^3
Do: carriers Find the electron and...
please show steps by step Note: In following problems use (if needed) B=1.08x1031K3.cm-6 for Si and...
please show steps by step
Note: In following problems use (if needed) B=1.08x1031K3.cm-6 for Si and B = 2.31x1030K3cm" for Ge. Eg (for Si): 1.12 eV, Eg (for Ge)-0.66 eV Boltzmann's constant = 8.62x10-5 eW0K 1.38044x10-23J/0K 1. Silicon is doped with 6x10 18 boron atoms/cm3 (a) Is this n or p type silicon? (b) What are the hole and electron concentrations at 200K? 2. Silicon is doped with a donor atoms of 4x10 16 atoms/cm3 (a) Find the electron and...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
Find the electron and hole concentrations and Fermi level in silicon at 300 K (a) for...
Find the electron and hole concentrations and Fermi level in silicon at 300 K (a) for 1 x 10^15 boron atoms/cm^3 and (b) for 3 x 10^16 boron atoms/cm^3 and 2/9 x 10^16 arsenic atoms/cm^3. The first two are acceptor concentrations, and the third one is an donor concentration.
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm o...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm of arsenic (As) atoms, and 1.2 x 103 cm3 of boron (B) atoms. Assume that the impurities are completely ionized and the mobilities are μ,-1500 cm2/V-s, μ,-500 cm2/V-s, independent of impurity concentrations. Also assume intrinsic carrier concentration of Si n 1.5 x 10 cm). Hint!!; we can usually use the rule for compensated semiconductors as...
In a semiconductor it can be shown that the product of the electron and hole densities...
In a semiconductor it can be shown that the product of the electron and hole densities is the square of the intrinsic density, i.e., pm n. Find the equilibrium electron (n) and hole (p) concentrations and the location of the Fermi level (EF) referenced to the conduction band (Ec) or valence band (Ev) in Si at 27°C if the Si contains the following concentrations of shallow dopant atoms: a) 1x1016 cm-3 boron atoms b) 3x1016 cm-3 arsenic atoms and 2.9x1016...
Calculate the conductivity, in (12-cm) 1, of extrinsic Si doped with 2.02 x 1017 atoms/cm of...
Calculate the conductivity, in (12-cm) 1, of extrinsic Si doped with 2.02 x 1017 atoms/cm of arsenic. The electron and hole mobilities are 1350 and 450 cm2 V-s respectively. (answer format X.X)
Find the resistivity at 300 K for a silicon sample doped with 1.0 times 10^14 cm^-3...
Find the resistivity at 300 K for a silicon sample doped with 1.0 times 10^14 cm^-3 of phosphorous atoms, 8.5 times 10^13 cm^-3 of arsenic atoms, and 1.2 times 10^13 cm^-3 of boron atoms. Assume that the impurities are completely ionized and the mobilities are mu_n = 1500 cm^2/V-s, mu_p = 500 cm^2/V-s, independent of impurity concentrations.
please show step by step how to solve it Note: In following problems use (if needed)...
please show step by step how to solve it
Note: In following problems use (if needed) B=1.08x1031K3.cm-6 for Si and B 2.31x10-0K'3.cm" for Ge. Eg (for Si 1.12 eV. Eg (for Ge)-0.66 eV Boltzmann's constant = 8.62x10-5 eV'K= 1.3804410-23J/0K #6) Silicon is doped with a Indium atoms of 7x10 19 atoms/cm 3, Find the electron and hole concentrations, the electron and hole mobility, and resistivity of the this silicon material at room temperature. Is this material n or p type?...
2.) Starting with intrinsic silicon with mobilities of n = 1350 cm2 N s and =...
2.) Starting with intrinsic silicon with mobilities of n = 1350 cm2 N s and = 480 cm2 Nis: a. Find the resistivity p of the silicon. b. If the silicon is now doped with 101/cm-of B (Boron), find the majority and minority carrier concentrations. What is the density of fixed charge in the material (immobile ions)? C. What type of material is this (n type or p type)? d. What is the majority carrier (hole or electron)? e. Find...
please show steps by step
Note: In following problems use (if needed) B=1.08x1031K3.cm-6 for Si and B = 2.31x1030K3cm" for Ge. Eg (for Si): 1.12 eV, Eg (for Ge)-0.66 eV Boltzmann's constant = 8.62x10-5 eW0K 1.38044x10-23J/0K 1. Silicon is doped with 6x10 18 boron atoms/cm3 (a) Is this n or p type silicon? (b) What are the hole and electron concentrations at 200K? 2. Silicon is doped with a donor atoms of 4x10 16 atoms/cm3 (a) Find the electron and...
2. (a) A piece of silicon is doped with 5x107/cm boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 150°C. (b) Calculate the resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 um'. Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 104 cm boron atoms. What you mention for...
P4. Find the resistivity at T 300 K for a silicon sample doped with 1 x 10cm of phosphorus (P) atoms, 8.5 x 10 cm of arsenic (As) atoms, and 1.2 x 103 cm3 of boron (B) atoms. Assume that the impurities are completely ionized and the mobilities are μ,-1500 cm2/V-s, μ,-500 cm2/V-s, independent of impurity concentrations. Also assume intrinsic carrier concentration of Si n 1.5 x 10 cm). Hint!!; we can usually use the rule for compensated semiconductors as...
In a semiconductor it can be shown that the product of the electron and hole densities is the square of the intrinsic density, i.e., pm n. Find the equilibrium electron (n) and hole (p) concentrations and the location of the Fermi level (EF) referenced to the conduction band (Ec) or valence band (Ev) in Si at 27°C if the Si contains the following concentrations of shallow dopant atoms: a) 1x1016 cm-3 boron atoms b) 3x1016 cm-3 arsenic atoms and 2.9x1016...
Calculate the conductivity, in (12-cm) 1, of extrinsic Si doped with 2.02 x 1017 atoms/cm of arsenic. The electron and hole mobilities are 1350 and 450 cm2 V-s respectively. (answer format X.X)
Find the resistivity at 300 K for a silicon sample doped with 1.0 times 10^14 cm^-3 of phosphorous atoms, 8.5 times 10^13 cm^-3 of arsenic atoms, and 1.2 times 10^13 cm^-3 of boron atoms. Assume that the impurities are completely ionized and the mobilities are mu_n = 1500 cm^2/V-s, mu_p = 500 cm^2/V-s, independent of impurity concentrations.
please show step by step how to solve it
Note: In following problems use (if needed) B=1.08x1031K3.cm-6 for Si and B 2.31x10-0K'3.cm" for Ge. Eg (for Si 1.12 eV. Eg (for Ge)-0.66 eV Boltzmann's constant = 8.62x10-5 eV'K= 1.3804410-23J/0K #6) Silicon is doped with a Indium atoms of 7x10 19 atoms/cm 3, Find the electron and hole concentrations, the electron and hole mobility, and resistivity of the this silicon material at room temperature. Is this material n or p type?...
2.) Starting with intrinsic silicon with mobilities of n = 1350 cm2 N s and = 480 cm2 Nis: a. Find the resistivity p of the silicon. b. If the silicon is now doped with 101/cm-of B (Boron), find the majority and minority carrier concentrations. What is the density of fixed charge in the material (immobile ions)? C. What type of material is this (n type or p type)? d. What is the majority carrier (hole or electron)? e. Find...
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