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Note: In following problems use (if needed)...
please show steps by step Note: In following problems use (if needed) B=1.08x1031K3.cm-6 for Si and...
please show steps by step
Note: In following problems use (if needed) B=1.08x1031K3.cm-6 for Si and B = 2.31x1030K3cm" for Ge. Eg (for Si): 1.12 eV, Eg (for Ge)-0.66 eV Boltzmann's constant = 8.62x10-5 eW0K 1.38044x10-23J/0K 1. Silicon is doped with 6x10 18 boron atoms/cm3 (a) Is this n or p type silicon? (b) What are the hole and electron concentrations at 200K? 2. Silicon is doped with a donor atoms of 4x10 16 atoms/cm3 (a) Find the electron and...
Could i please have assistance in working out and theory for this question. Could i please...
Could i please have assistance in working out and theory for
this question. Could i please get further explanation on
how values are achieved with B and C Please
a) Calculate the conductivity of an intrinsic Si conductor at 27 °C if the hole mobility is 450 cm2 V1s-1 and the electron mobility is 1350 cm2 V's1. Assume an intrinsic carrier density of 1.45 x 1010 carriers/cm3 and an electron charge of -0.16 x 10-18 C. b) Using Figure 5,...
Could i please have assistance in working out and theory for this question. a) Calculate the...
Could i please have assistance in working out and theory for
this question.
a) Calculate the conductivity of an intrinsic Si conductor at 27 °C if the hole mobility is 450 cm2 V1s-1 and the electron mobility is 1350 cm2 V's1. Assume an intrinsic carrier density of 1.45 x 1010 carriers/cm3 and an electron charge of -0.16 x 10-18 C. b) Using Figure 5, calculate the conductivity of the Si intrinsic conductor if the temperature is increased to 127 °C...
14 Q1. Given a NA = 10 /cm" doped Si sample a) b) c) Calculate Ef...
14 Q1. Given a NA = 10 /cm" doped Si sample a) b) c) Calculate Ef as a function of Temperature T at 500K intervals from 3000K to 5000K. Any conclusion could be drawn from a) part? If the donor has ND-1014/cm3 to replace the NA, what is the Ef at 3000K, 4000K and 5000K The band gap affected by temperature should be included. Q2. At 300K, please find the doping limit of both n-type and p-type Ge to have...
Could i please have assistance in working out and theory for this question. a) Calculate the...
Could i please have assistance in working out and theory for
this question.
a) Calculate the conductivity of an intrinsic Si conductor at 27 °C if the hole mobility is 450 cm2 V1s-1 and the electron mobility is 1350 cm2 V's1. Assume an intrinsic carrier density of 1.45 x 1010 carriers/cm3 and an electron charge of -0.16 x 10-18 C. b) Using Figure 5, calculate the conductivity of the Si intrinsic conductor if the temperature is increased to 127 °C...
Please Solve: Using the Concept of Higher Level of Physics classmate Date Page 10 Write down...
Please Solve: Using the Concept of Higher Level of
Physics
classmate Date Page 10 Write down the characteristics and application of Laser @ Write down the applications of optical fiber in medicine and industry. I Give 5 examples of direct and indirect semiconductors. @ what is compound semi-conductors? Give 4 examples of each type. o prove that: N(E) & e L 1 An unknown semi-conductor has Eg=1. lev and NC= N it is doped with 10 cm doners, where the...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
**Please Show All The Steps** As I mentioned in the class assume that we have a...
**Please Show All The Steps**
As I mentioned in the class assume that we have a GaAs (Gallium
Arsenide) sample which was doped with excessive As to produce a
resistivity of 0.05 Ωm. Owing to the presence of an unknown
acceptor impurity the actual resistivity was 0.06Ωm, the sample
remaining n-type. What were the concentrations of donors and
acceptors present?
(Please take μe=0.85 m2/Vs and assume that all impurity atoms
are ionized)
PHYSICAL CONSTANTS Avagadro's Number NA- 6.02 x 10*23...
2 photos The depletion layer width for different junctions is given by the following equations: w...
2
photos
The depletion layer width for different junctions is given by the following equations: w = het w = jane te pare VO w = (1280XL) Intrinsic carrier concentration of silicon, n., is 9.65 x 10 cm 1) The expressions for minority carrier diffusion length and diffusion coefficients and thermal velocity are as follows (for n-and p-type materials). L. - (Dpt) La = (Dat)* Và = To 1/NA in p-type material 1 - 1/(RexNA), where Re is the recombination...
Please help me out.. Need to pass this course as a removal for my other course.....
Please help me out.. Need to pass this course as a removal for
my other course..
Si material parameters: Band gap energy at 300 K: Eg = 1.124 eV Relative permittivity: x = 11.7 Effective mass of electron: m =1.08m for density of states, Effective mass of hole: m = 0.81m for density of states, m = 0.26m for conductivity m =0.39m for conductivity Up = 470 cm/V.s Mobility: Un = 1400 cm /V-s, Diffusion coefficient: Do = 36 cm²/s,...
please show steps by step
Note: In following problems use (if needed) B=1.08x1031K3.cm-6 for Si and B = 2.31x1030K3cm" for Ge. Eg (for Si): 1.12 eV, Eg (for Ge)-0.66 eV Boltzmann's constant = 8.62x10-5 eW0K 1.38044x10-23J/0K 1. Silicon is doped with 6x10 18 boron atoms/cm3 (a) Is this n or p type silicon? (b) What are the hole and electron concentrations at 200K? 2. Silicon is doped with a donor atoms of 4x10 16 atoms/cm3 (a) Find the electron and...
Could i please have assistance in working out and theory for
this question. Could i please get further explanation on
how values are achieved with B and C Please
a) Calculate the conductivity of an intrinsic Si conductor at 27 °C if the hole mobility is 450 cm2 V1s-1 and the electron mobility is 1350 cm2 V's1. Assume an intrinsic carrier density of 1.45 x 1010 carriers/cm3 and an electron charge of -0.16 x 10-18 C. b) Using Figure 5,...
Could i please have assistance in working out and theory for
this question.
a) Calculate the conductivity of an intrinsic Si conductor at 27 °C if the hole mobility is 450 cm2 V1s-1 and the electron mobility is 1350 cm2 V's1. Assume an intrinsic carrier density of 1.45 x 1010 carriers/cm3 and an electron charge of -0.16 x 10-18 C. b) Using Figure 5, calculate the conductivity of the Si intrinsic conductor if the temperature is increased to 127 °C...
14 Q1. Given a NA = 10 /cm" doped Si sample a) b) c) Calculate Ef as a function of Temperature T at 500K intervals from 3000K to 5000K. Any conclusion could be drawn from a) part? If the donor has ND-1014/cm3 to replace the NA, what is the Ef at 3000K, 4000K and 5000K The band gap affected by temperature should be included. Q2. At 300K, please find the doping limit of both n-type and p-type Ge to have...
Could i please have assistance in working out and theory for
this question.
a) Calculate the conductivity of an intrinsic Si conductor at 27 °C if the hole mobility is 450 cm2 V1s-1 and the electron mobility is 1350 cm2 V's1. Assume an intrinsic carrier density of 1.45 x 1010 carriers/cm3 and an electron charge of -0.16 x 10-18 C. b) Using Figure 5, calculate the conductivity of the Si intrinsic conductor if the temperature is increased to 127 °C...
Please Solve: Using the Concept of Higher Level of
Physics
classmate Date Page 10 Write down the characteristics and application of Laser @ Write down the applications of optical fiber in medicine and industry. I Give 5 examples of direct and indirect semiconductors. @ what is compound semi-conductors? Give 4 examples of each type. o prove that: N(E) & e L 1 An unknown semi-conductor has Eg=1. lev and NC= N it is doped with 10 cm doners, where the...
Taking pure silicon (Si) as an example, explain what is meant by the terms electron-hole generation and recombination, how they affect the electrical conductivity, and define what is meant by the "intrinsic carrier density", n. [5 marks] Q3. a) b) With the aid of both lattice and energy band diagrams, explain how n-type doping of Si is achieved and state two types of suitable dopant atoms. [7 marks] c) An n-type region on a Si wafer has a donor concentration...
**Please Show All The Steps**
As I mentioned in the class assume that we have a GaAs (Gallium
Arsenide) sample which was doped with excessive As to produce a
resistivity of 0.05 Ωm. Owing to the presence of an unknown
acceptor impurity the actual resistivity was 0.06Ωm, the sample
remaining n-type. What were the concentrations of donors and
acceptors present?
(Please take μe=0.85 m2/Vs and assume that all impurity atoms
are ionized)
PHYSICAL CONSTANTS Avagadro's Number NA- 6.02 x 10*23...
2
photos
The depletion layer width for different junctions is given by the following equations: w = het w = jane te pare VO w = (1280XL) Intrinsic carrier concentration of silicon, n., is 9.65 x 10 cm 1) The expressions for minority carrier diffusion length and diffusion coefficients and thermal velocity are as follows (for n-and p-type materials). L. - (Dpt) La = (Dat)* Và = To 1/NA in p-type material 1 - 1/(RexNA), where Re is the recombination...
Please help me out.. Need to pass this course as a removal for
my other course..
Si material parameters: Band gap energy at 300 K: Eg = 1.124 eV Relative permittivity: x = 11.7 Effective mass of electron: m =1.08m for density of states, Effective mass of hole: m = 0.81m for density of states, m = 0.26m for conductivity m =0.39m for conductivity Up = 470 cm/V.s Mobility: Un = 1400 cm /V-s, Diffusion coefficient: Do = 36 cm²/s,...
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