Consider a p-n junction diode with I0=100pA,
I(v)=I0[exp(eV/kt)-1] and which is biased at 100mA. Assume the
diode can dissipate at most 100mW.
a) Find the dissipated power in the diode field at 25°C.
b) Find the power for an overheated diode to 250°C.
Consider a p-n junction diode with I0=100pA, I(v)=I0[exp(eV/kt)-1] and which is biased at 100mA. Assume the...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...