chose the right answer, 1- Watch the animation for Fig. 41.8. At T = 0 K,...
chose the right answer,
1- Watch the animation for Fig. 41.8. At T = 0 K, which is true?
a- 100% of the states below the Fermi level are occupied and none of the states above it are occupied.
b- 100% of the states above the Fermi level are occupied and none of the states below it are occupied
c- Most of the states below the Fermi level are occupied and some of the states above it are occupied
d- Most of the states above the Fermi level are occupied and some of the states below it are occupied.
2- Which is true when the temperature is above T = 0 K?
a- 100% of the states below the Fermi level are occupied and none of the states above it are occupied
b- 100% of the states above the Fermi level are occupied and none of the states below it are occupied
c- Most of the states below the Fermi level are occupied and some of the states above it are occupied
d- Most of the states above the Fermi level are occupied and some of the states below it are occupied.
3- As the temperature increases, which is true?
a- Some of the electrons just below the Fermi level move up to states just above that level.
b- Some of the electrons at the bottom of the band move up to states just above the Fermi level.
c- Some of the electrons at the bottom of the band move up to states just below the Fermi level
d- Some of the electrons just above the Fermi level move down to states just below that level.
Homework Answers
1)
a- 100% of the states below the Fermi level are occupied and none of the states above it are occupied.
2)
c- Most of the states below the Fermi level are occupied and some of the states above it are occupied
3)
a- Some of the electrons just below the Fermi level move up to states just above that level
Add Answer to:
chose the right answer,
1- Watch the animation for Fig. 41.8. At T = 0 K,...
i. l e blank(s). A gap suggest two-word in your answer Drift current in semiconductors is...
i. l e blank(s). A gap suggest two-word in your answer Drift current in semiconductors is due to electric [20] tield. Carriers in the band are referred to as statistics is applied to electrons in The semiconductors. The position and principle states that we cannot simultaneously determine the of electrons. Vy is a . while w is a number and Current in the conduction is due to the flow of Extrinsic semiconductors are vii. viii. The wave function in Schrodinger's...
1. Sketch the Fermi-dirac probability function at T= 0 K and T=300 K for function of...
1. Sketch the Fermi-dirac probability function at T= 0 K and T=300 K for function of E above and below EF. 2. Find (EP) 3. Describe Fermi Energy. What are the significances of Fermi energy level in semiconductor device physics? 4. Sktech Density of State Diagram, Fermi-dirac probability function diagram vs. E from there sketch n(E)vs.E and p(E)vs. E for N-type and P-type semiconductors, respectively. 5. A semiconductor has the following parameters: a. Eg = 1.12 eV, x = 4.05...
1. Sketch the Fermi-dirac probability function at T=0 K and T=300 K for function of E...
1. Sketch the Fermi-dirac probability function at T=0 K and T=300 K for function of E above and below EF. 2. Find f(EP). 3. Describe Fermi Energy. What are the significances of Fermi energy level in semiconductor device physics? 4. Sktech Density of State Diagram, Fermi-dirac probability function diagram vs. E from there sketch n(E)vs.E and p(E)vs. E for N-type and P-type semiconductors, respectively. 5. A semiconductor has the following parameters: a. Eg = 1.12 eV, x = 4.05 eV,...
Please help me 1. In degenerate p-type silicon, a. The Fermi energy is above the valence...
Please help me
1. In degenerate p-type silicon, a. The Fermi energy is above the valence energy and below the intrinsic Fermi energy b. The Fermi energy is below the valence energy c. The Fermi energy is above the conduction energy d. The Fermi energy is below the conduction energy and above the intrinsic Fermi energy 2. A semiconductor has No 5X 1010 cm3 and N-2X 1018 cm2. It is a. b. C. d. N-type and electrons are the majority...
B3 (a) Assume that the T = 0 version of the Fermi-Dirac distribution, namely 1 f...
B3 (a) Assume that the T = 0 version of the Fermi-Dirac distribution, namely 1 f (E) exp [E E)/(kBT) +1 in the usual notation, with Ep the Fermi energy, applies for T> 0. Sketch, on the same axes, the distribution for T = 0 and for T> 0, marking the Fermi energy and indicating the thermal energy kBT 5 Marks (b) In the Sommerfeld model (free electron quantum gas), each electron occupies (n/L)3 of k-space volume. Remembering that we...
Please Write the answer very clear By using PC. 2. How far below (or above) the...
Please Write the answer very clear By using PC.
2. How far below (or above) the Fermi energy can states be found which are 90% occupied by electrons at 300 K? Repeat this calculation for 99%, 10% and 1% Consider what would happen if instead of using periodic boundary conditions, the following the boundary conditions b. 40, y, z, t) 0, (L,y, z,t) 0, ?(z, 0, z, t)-0, y(z, L, z, t) 0, v(x,g, 0, t) 0, are retained for...
4.6 A,b,c,d distribution at the same teiiper atul 4.6 Electrons in semiconductors. A semiconductor has a...
4.6
A,b,c,d
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EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described...
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E(k)t Er K. 4. (Advanced Level) Graphene is a special type of material which is two- dimensional and has a linear E...
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Classical free electron model The classical free electron model of metals treats conduction electrons as "a...
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i. l e blank(s). A gap suggest two-word in your answer Drift current in semiconductors is due to electric [20] tield. Carriers in the band are referred to as statistics is applied to electrons in The semiconductors. The position and principle states that we cannot simultaneously determine the of electrons. Vy is a . while w is a number and Current in the conduction is due to the flow of Extrinsic semiconductors are vii. viii. The wave function in Schrodinger's...
1. Sketch the Fermi-dirac probability function at T= 0 K and T=300 K for function of E above and below EF. 2. Find (EP) 3. Describe Fermi Energy. What are the significances of Fermi energy level in semiconductor device physics? 4. Sktech Density of State Diagram, Fermi-dirac probability function diagram vs. E from there sketch n(E)vs.E and p(E)vs. E for N-type and P-type semiconductors, respectively. 5. A semiconductor has the following parameters: a. Eg = 1.12 eV, x = 4.05...
1. Sketch the Fermi-dirac probability function at T=0 K and T=300 K for function of E above and below EF. 2. Find f(EP). 3. Describe Fermi Energy. What are the significances of Fermi energy level in semiconductor device physics? 4. Sktech Density of State Diagram, Fermi-dirac probability function diagram vs. E from there sketch n(E)vs.E and p(E)vs. E for N-type and P-type semiconductors, respectively. 5. A semiconductor has the following parameters: a. Eg = 1.12 eV, x = 4.05 eV,...
Please help me
1. In degenerate p-type silicon, a. The Fermi energy is above the valence energy and below the intrinsic Fermi energy b. The Fermi energy is below the valence energy c. The Fermi energy is above the conduction energy d. The Fermi energy is below the conduction energy and above the intrinsic Fermi energy 2. A semiconductor has No 5X 1010 cm3 and N-2X 1018 cm2. It is a. b. C. d. N-type and electrons are the majority...
B3 (a) Assume that the T = 0 version of the Fermi-Dirac distribution, namely 1 f (E) exp [E E)/(kBT) +1 in the usual notation, with Ep the Fermi energy, applies for T> 0. Sketch, on the same axes, the distribution for T = 0 and for T> 0, marking the Fermi energy and indicating the thermal energy kBT 5 Marks (b) In the Sommerfeld model (free electron quantum gas), each electron occupies (n/L)3 of k-space volume. Remembering that we...
Please Write the answer very clear By using PC.
2. How far below (or above) the Fermi energy can states be found which are 90% occupied by electrons at 300 K? Repeat this calculation for 99%, 10% and 1% Consider what would happen if instead of using periodic boundary conditions, the following the boundary conditions b. 40, y, z, t) 0, (L,y, z,t) 0, ?(z, 0, z, t)-0, y(z, L, z, t) 0, v(x,g, 0, t) 0, are retained for...
4.6
A,b,c,d
distribution at the same teiiper atul 4.6 Electrons in semiconductors. A semiconductor has a p efective m 2x 1028 m 13 Phonon sp relation (th structure h2 The Fermi level in the semiconductor could be above or below the conduction band edge. Take the electron effective mass as the free electron mass. For Ec 0.05 eV and T = 300 K, do the following in the range 0.0 eV < E-E 0.1eV: where a is Derive an e...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...
E(k)t Er K. 4. (Advanced Level) Graphene is a special type of material which is two- dimensional and has a linear E-k diagram. The conduction and valence bands touch each other at a singularity, known as the Dirac point. In the unexcited state, the valence band is completely filled, while the conduction band is completely empty From the E-k diagram shown above, deduce the equation of the E-k curve. Hence, from the equation you deduced, speculate the special properties of...
Classical free electron model The classical free electron model of metals treats conduction electrons as "a classical gas". What do we mean by this? Select one: O a. We assume average speed <v> = 3kB T/m O b. We apply the same assumptions as we do about an ideal gas O c. We apply the Fermi-Dirac speed distribution to the electrons O d. We assume average speed <b> = 3kBT/2 O e. We assume the speed of the electrons is...
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