Question

For all BJTs, assume: IVBE,on1-0.7V, β 100, and|VCE,sat-0.1V (use Vr 25mV) For all MOSFETs, assume: I'm|-1V and μ COX-20 V2.

Answer 1

Because I_G = 01, V_D = V_s The mosfet is in saturation Therefore I_D = 1/ 2 mu_n C) times w/L (V_GS - V_T)^2 by using KvL V DD - ID_1 - VDS - ID_1 R_s_1 - V_ss = 0 I_D = v_DD -VSS- VDS/ R_D_1 + R_s_1 therefore V_DS = V_GS I_D = V_DD- V_ss - V_GS/R_D + R_s_1 Therefore v_DD -V_ss -V_Gs/ r_D_1 + R_S_1 = 1/ 2 mu_n co times w/ L (V_Gs - v_t)^2 Let substitute values 3 + 3 - V)gs/ 10 k + 0.5 k = 1/ 2 times 20 mu times 100 (V_gs - 1)^2 \r\n 6 - V_gs/ 10.5 k = 1 m (V_GS- 1)^2/ 6 - V_gs = 10.5 (V_Gs^2 - 2 V_gs + 1) 10.5 V_Gs^2 - 21 GS + 10.5 - 6 + V_GS = 0 1.5 v_GS^2 - 20 v GS + 4.5 = 0 by using solving aboving quadratic equation we get v_Gs V_Gs = 20 20 - 4 times 10.5 times 4.5/ 2 times