Question

1. Design the circuits in Figs. 6(a) and 6(b) with the following specifications NPN PNP 1mA 3.5V 1mA 1.5V VR VEE0 ЕЕ ЕЕ 100 2

cc Vcc B1 0.7+ VEc CE 0.7 Rc RB1 -VEE -VEE Figure 6: Resistive DC biasing circuit for (a) NPN (b) PNP

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Answer #1

a) NPN-transistor Suppty 132. 32_- cktD ckta + P Assu wy vee*2.sv冫1 ht, Lot 5-1-S-2-S RE= 99 o. 094frm ck1O hK hawe Lensfdei lo 1.7 Rih, R, B2- RI-Rtケ 6(bPNP transistor speciflcaions given: negligible C.4aaoA g.거 VEc Dg BI R裏 1-5 mA VB = 3.3V 132- R B2 R82-R

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