Homework Answers
Add Answer to:
b. At TR, calculate the number of free electrons (n) per mº for Ag assuming the...
In class Monday we established that the number density of free electrons in silicon was 1.09E+16 electrons per cubic meter. Now calculate the number of free electrons per silicon atom. The density of...
In class Monday we established that the number density of free electrons in silicon was 1.09E+16 electrons per cubic meter. Now calculate the number of free electrons per silicon atom. The density of silicon is 2.33 Mg/m3 ; the atomic mass of silicon is 28.085 g/mole. Consider silicon which has a band gap of 1.11 eV and a measured conductivity of 0.00034 /ohmm at 300K. Its electron mobility is 0.145 m^2/(V x sec) and its hole mobility is 0.050 m^2/(V...
Here are the equations to use: Use Eq. (2) below to calculate the intrinsic number density...
Here are the equations to use:
Use Eq. (2) below to calculate the intrinsic number density of conduction electrons in Si at a temperature of 405 K. You may use the values of effective mass mp 1.04mo. 09m1 where m is the mass of a free electron and the band gap energy value E- 1.12 ev, The conductivity of a semiconductor material can be expressed by where q is the elementary charge, n the number density of conduction electrons, μη...
Calculate the number density of mobile electrons in Ag (density 10.5 g/cm3 ) assuming one free...
Calculate the number density of mobile electrons in Ag (density 10.5 g/cm3 ) assuming one free electron per atom. Compare your answere with the experimental value, 5.86 x 1028 m-3 .
Examples1 1. We want to determine the number of free electrons per unit volume that participate in conduction in a monovalent metal at room temperature. There are 2 approaches. One approach is the...
Examples1 1. We want to determine the number of free electrons per unit volume that participate in conduction in a monovalent metal at room temperature. There are 2 approaches. One approach is theoretical approach (A) and the other one is the experimental approach (B) A Calculate the number of free conduction electrons in a unit volume of an FCC metal with lattice parameter 3.6 X 10 10 m at room temperature. B) A Hall experiment is carried out and the...
a) (10 points) Calculate the occupation probability f(E), that is the probability that a state will...
a) (10 points) Calculate the occupation probability f(E), that is the probability that a state will be occupied, at 293 K for a state at the bottom of the conduction band in germanium. The energy of the gap is Eg= 0.67 eV and assume that the Fermi energy lies in the middle of the gap. b) (20 points) Aluminum is a good electrical conductor with a density of 2.7 g/cm3 and a molar mass of 27 g/mol. Each aluminum atom...
In a one-dimensional solid with free electrons and T-0K, assuming the free electron concentration is n,...
In a one-dimensional solid with free electrons and T-0K, assuming the free electron concentration is n, please calculate the Fermi energy EF. What is the total electron kinetic energy? ( Express your result in terms of electron mass m and other constants) (1000)
(10 points) Lithium has one valence electron per atom that can be modeled as free electrons. Consider a Lithium sample made up of n 4.7 x 102 e/cm a) Determine the Fermi energy of Lithium. b) Calc...
(10 points) Lithium has one valence electron per atom that can be modeled as free electrons. Consider a Lithium sample made up of n 4.7 x 102 e/cm a) Determine the Fermi energy of Lithium. b) Calculate the Fermi temperature and the electron velocity at the Fermi surface c) Determine the value of the relaxation time and the mean free path of the conduction 2. electrons if the resistivity is approximately 10-5n.cm at room temperature. d) Calculate the specific heat...
Classical free electron model The classical free electron model of metals treats conduction electrons as "a...
Classical free electron model The classical free electron model of metals treats conduction electrons as "a classical gas". What do we mean by this? Select one: O a. We assume average speed <v> = 3kB T/m O b. We apply the same assumptions as we do about an ideal gas O c. We apply the Fermi-Dirac speed distribution to the electrons O d. We assume average speed <b> = 3kBT/2 O e. We assume the speed of the electrons is...
4.6 A,b,c,d distribution at the same teiiper atul 4.6 Electrons in semiconductors. A semiconductor has a...
4.6
A,b,c,d
distribution at the same teiiper atul 4.6 Electrons in semiconductors. A semiconductor has a p efective m 2x 1028 m 13 Phonon sp relation (th structure h2 The Fermi level in the semiconductor could be above or below the conduction band edge. Take the electron effective mass as the free electron mass. For Ec 0.05 eV and T = 300 K, do the following in the range 0.0 eV < E-E 0.1eV: where a is Derive an e...
An n-type germanium specimen is known to have an electron concentration of 5 x 1022 m-?....
An n-type germanium specimen is known to have an electron concentration of 5 x 1022 m-?. (a) Such type of semiconductor can be produced by the addition of what element to intrinsic germanium? Give an example and explain why it can be used for this purpose. (b) Calculate the electrical conductivity of this material, assuming electron and hole mobilities of 0.1 and 0.05 m²/V s, respectively. (c) Sketch the approximate position of Fermi level in a band diagram for this...
Here are the equations to use:
Use Eq. (2) below to calculate the intrinsic number density of conduction electrons in Si at a temperature of 405 K. You may use the values of effective mass mp 1.04mo. 09m1 where m is the mass of a free electron and the band gap energy value E- 1.12 ev, The conductivity of a semiconductor material can be expressed by where q is the elementary charge, n the number density of conduction electrons, μη...
Examples1 1. We want to determine the number of free electrons per unit volume that participate in conduction in a monovalent metal at room temperature. There are 2 approaches. One approach is theoretical approach (A) and the other one is the experimental approach (B) A Calculate the number of free conduction electrons in a unit volume of an FCC metal with lattice parameter 3.6 X 10 10 m at room temperature. B) A Hall experiment is carried out and the...
a) (10 points) Calculate the occupation probability f(E), that is the probability that a state will be occupied, at 293 K for a state at the bottom of the conduction band in germanium. The energy of the gap is Eg= 0.67 eV and assume that the Fermi energy lies in the middle of the gap. b) (20 points) Aluminum is a good electrical conductor with a density of 2.7 g/cm3 and a molar mass of 27 g/mol. Each aluminum atom...
In a one-dimensional solid with free electrons and T-0K, assuming the free electron concentration is n, please calculate the Fermi energy EF. What is the total electron kinetic energy? ( Express your result in terms of electron mass m and other constants) (1000)
(10 points) Lithium has one valence electron per atom that can be modeled as free electrons. Consider a Lithium sample made up of n 4.7 x 102 e/cm a) Determine the Fermi energy of Lithium. b) Calculate the Fermi temperature and the electron velocity at the Fermi surface c) Determine the value of the relaxation time and the mean free path of the conduction 2. electrons if the resistivity is approximately 10-5n.cm at room temperature. d) Calculate the specific heat...
Classical free electron model The classical free electron model of metals treats conduction electrons as "a classical gas". What do we mean by this? Select one: O a. We assume average speed <v> = 3kB T/m O b. We apply the same assumptions as we do about an ideal gas O c. We apply the Fermi-Dirac speed distribution to the electrons O d. We assume average speed <b> = 3kBT/2 O e. We assume the speed of the electrons is...
4.6
A,b,c,d
distribution at the same teiiper atul 4.6 Electrons in semiconductors. A semiconductor has a p efective m 2x 1028 m 13 Phonon sp relation (th structure h2 The Fermi level in the semiconductor could be above or below the conduction band edge. Take the electron effective mass as the free electron mass. For Ec 0.05 eV and T = 300 K, do the following in the range 0.0 eV < E-E 0.1eV: where a is Derive an e...
An n-type germanium specimen is known to have an electron concentration of 5 x 1022 m-?. (a) Such type of semiconductor can be produced by the addition of what element to intrinsic germanium? Give an example and explain why it can be used for this purpose. (b) Calculate the electrical conductivity of this material, assuming electron and hole mobilities of 0.1 and 0.05 m²/V s, respectively. (c) Sketch the approximate position of Fermi level in a band diagram for this...
Most questions answered within 3 hours.
-
By exerting an effort of 115 pounds, you move a 300–pound crate
up an inclined plane...
asked 26 seconds ago -
A projectile is launched horizontally with an initial speed 20
m/s. After 4 seconds how far...
asked 6 minutes ago -
A pipe is open on both ends. The diameter of the pipe is 5.0 cm
and...
asked 19 minutes ago -
How many times more light does a 16-inch diameter telescope
mirror gather than your 2-inch telescope?
asked 20 minutes ago -
11.At present, the cost of the clean air and water regulations
is
A) higher then the...
asked 20 minutes ago -
2. How long would it take for 1.50 mol of water at 100.0 ∘C to
be...
asked 37 minutes ago -
According to the February 2008 Federal Trade Commission report
on consumer fraud and identity theft, 23%...
asked 49 minutes ago -
Data is only as good as its completeness. And we have all dealt
with incomplete data....
asked 45 minutes ago -
Design a Class Diagram for a game of Dots and Boxes
that can do the
following:...
asked 50 minutes ago -
Describe the Christian Anfinsen’s experimentS AND explain how
they have resulted in our current understanding of...
asked 1 hour ago -
Do a research and write about the below areas of
SPAIN country business activities (GLOBAL
BUSINESS)...
asked 1 hour ago -
Production and operations management involves three main types
of decisions that are made at three different...
asked 1 hour ago