Case Study (Read Carefully): Assume you have a typical piece of Silicon Wafer, it is doped...
6. A silicon wafer is doped with donor atoms, N-5x0 cm(bonus question) (a) Determine (Ec-EF), (EF-Ev), (Ep-E) at 300 K. Assume all the donor atoms are ionized. (b) Plot the position of Fermi level (EF) in the bandgap as a function of temperature for 300 Ts700 K. In this temperature range, it can be assumed that all the donor atoms are ionized. (c) Plot the position of Fermi level (Er) in the bandgap as acceptor atoms are added (N.- 104,...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
EENG 245 Physical electronics HW 1 1) The NaCl crystal is cubic, and can be described as follows. Na atoms sit at the corners and faces of a cube, and Cl atoms sit in between two Na atoms. This means that a Clatom is found half-way along each of the cube edges, and there is a Cl in the center of the cube. (We could also have described the lattice by interchanging Na and Cl in the description above.) Another...