Question

In the figure circuit section AB absorbs energy at a rate of 49 W when current i = 0.75 A through it is in the indicated direction. Resistance R = 2.0 Ω. (a) What is the potential difference between A and B? Emf device X lacks internal resistance. (b) What is its emf?
w *90 B R

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Answer #1

VAB = 요 49 O15 65-33V 아 (P E - VA6 - iR = 6533-075(②) 163-83|v

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