Homework Answers
d)
The light had higher frequency than the cut off frequency
The light has a shorter wavelength than the cutoff wavelength
e) more expensive than si
have a band gap that can be varied
have a direct band gap
good for absorbing optical radiation
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(d) Light incident on a semiconductor will be absorbed if: The light has a longer wavelength...
(d) Light incident on a semiconductor will be absorbed if: (The light has a longer wavelength...
(d) Light incident on a semiconductor will be absorbed if: (The light has a longer wavelength than the cut-off wavelength the light has a shorter wavelength than the cut-off wavelength the light has a higher frequency than the cut-off frequency The light has a lower frequency than the cut-off frequency [The light is of high intensity.
(e) Compound semiconductors will always be: Easier to use that si More expensive than Si Have...
(e) Compound semiconductors will always be: Easier to use that si More expensive than Si Have a bandgap than can be varied Have Have a direct bandgap Good for absorbing optical radiation
Problem 3 (25 points) A silicon photodetector has an internal photo responsivity of 0.5 A/Wt wavelength of 850 nm. When photons of wavelength 850 nm are incident normally on this photodetector, so...
Problem 3 (25 points) A silicon photodetector has an internal photo responsivity of 0.5 A/Wt wavelength of 850 nm. When photons of wavelength 850 nm are incident normally on this photodetector, some photons are reflected back and some photons penetrate to the detection region and are absorbed by the photodetector. (a) The index of refraction of silicon is 3.45. If the electric current measured by this photodetector is 20 mA, what is the incident optical power? (b) Silicon has a...
. Which statement about electromagnetic energy is correct? (1) Violet light has a longer wavelength than...
. Which statement about electromagnetic energy is correct? (1) Violet light has a longer wavelength than red light. (2) Radar waves have a shorter wavelength than ultraviolet rays. (3) X-rays have a longer wavelength than infrared waves (4) Gamma rays have a shorter wavelength than visible light.
The wavelength of light fluoresced by molecules is longer than that absorbed because a. The molecules...
The wavelength of light fluoresced by molecules is longer than that absorbed because a. The molecules move faster, which produces a “red shift” in the fluorescence. b. Some of the absorbed energy causes bonds in the molecule to break, releasing energy, which results in the longer wavelength. c. Some of the energy absorbed by the molecules is lost to molecular vibrations before the fluorescence is produced, which results in a longer wavelength. d. The molecules are excited by the absorption...
Light of intensity 2 μW.cm-2 is incident on an iron sample of area 4 cm 2...
Light of intensity 2 μW.cm-2 is incident on an iron sample of area 4 cm 2 . Assume that the iron reflects 96% of the incident light and only 3% of the absorbed radiation lie in the violet region, which is above the critical/threshold frequency. (a) What intensity is available for the photoelectric effect ? (b) Assuming that all the photons in the violet region have an effective wavelength of 250nm, what is the number of electrons emitted per second?...
Indium Gallium Arsenide is a compound semiconductor with a controllable composition. It has the chemical formula...
Indium Gallium Arsenide is a compound semiconductor with a controllable composition. It has the chemical formula of InxGa1-xAs. The parameter x can vary between 0 and 1 (0 ≤ x ≤ 1). Irrespective of the value of x, the atomic ratio of (InxGa1-x) to As is 1. The room-temperature bandgap energy of GaAs is 1.39 eV, and that of InAs is 0.33 eV. A. Draw well-labeled, schematic, energy-band diagrams characteristic of GaAs and InAs. B. Calculate the maximum wavelength of...
Light of wavelength 400 nm is incident on a metal surface. The stopping potential for the...
Light of wavelength 400 nm is incident on a metal
surface. The stopping
potential for the resulting electrons is 0.91 V.
a) What is the work function of the metal?
b) Identify the metal. (Use the Table)
c) What is the cut-off frequency for this target?
76 Chapter 3 Waves and Particles 1: Electromagnetic Radia TABLE 3.1 Metal Work Function in eV) Cesium Potassium Sodium Magnesium 19 2.2 2.3 3.7 are ejected if the intensi surable time might be ne...
Light of wavelength 555 nm is incident on a glass block. (For each statement select G...
Light of wavelength 555 nm is incident on a glass block. (For each statement select G Greater than, L Less than, or E Equal to). WARNING: You have only 4 tries for this problem. A) The VELOCITY of the light in the glass is (GLE) than the VELOCITY of the light in vacuum. B) The FREQUENCY of the light in the glass is (GLE) than the FREQUENCY of the light in the vacuum. C) The WAVELENGTH of the light in...
Please help with this 4 part question Light with wavelength = 700.0000nm is incident on a...
Please help with this 4 part question
Light with wavelength = 700.0000nm is incident on a double slit with spacing d=50.00000micrometers. The distance to the screed is 0.5000meters. What is the spacing between neighboring constructive fringes near the center of the screen? (in meters) Light with wavelength 500nm is incident upon a surface at an angle of 40.0 degrees, refracts and enters a second medium. The light that enters the second medium travels faster than in the first medium. Compared...
(d) Light incident on a semiconductor will be absorbed if: (The light has a longer wavelength than the cut-off wavelength the light has a shorter wavelength than the cut-off wavelength the light has a higher frequency than the cut-off frequency The light has a lower frequency than the cut-off frequency [The light is of high intensity.
(e) Compound semiconductors will always be: Easier to use that si More expensive than Si Have a bandgap than can be varied Have Have a direct bandgap Good for absorbing optical radiation
Problem 3 (25 points) A silicon photodetector has an internal photo responsivity of 0.5 A/Wt wavelength of 850 nm. When photons of wavelength 850 nm are incident normally on this photodetector, some photons are reflected back and some photons penetrate to the detection region and are absorbed by the photodetector. (a) The index of refraction of silicon is 3.45. If the electric current measured by this photodetector is 20 mA, what is the incident optical power? (b) Silicon has a...
. Which statement about electromagnetic energy is correct? (1) Violet light has a longer wavelength than red light. (2) Radar waves have a shorter wavelength than ultraviolet rays. (3) X-rays have a longer wavelength than infrared waves (4) Gamma rays have a shorter wavelength than visible light.
Light of wavelength 400 nm is incident on a metal
surface. The stopping
potential for the resulting electrons is 0.91 V.
a) What is the work function of the metal?
b) Identify the metal. (Use the Table)
c) What is the cut-off frequency for this target?
76 Chapter 3 Waves and Particles 1: Electromagnetic Radia TABLE 3.1 Metal Work Function in eV) Cesium Potassium Sodium Magnesium 19 2.2 2.3 3.7 are ejected if the intensi surable time might be ne...
Please help with this 4 part question
Light with wavelength = 700.0000nm is incident on a double slit with spacing d=50.00000micrometers. The distance to the screed is 0.5000meters. What is the spacing between neighboring constructive fringes near the center of the screen? (in meters) Light with wavelength 500nm is incident upon a surface at an angle of 40.0 degrees, refracts and enters a second medium. The light that enters the second medium travels faster than in the first medium. Compared...
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