Question

Problem 3 (25 points) A silicon photodetector has an internal photo responsivity of 0.5 A/Wt wavelength of 850 nm. When photons of wavelength 850 nm are incident normally on this photodetector, some photons are reflected back and some photons penetrate to the detection region and are absorbed by the photodetector. (a) The index of refraction of silicon is 3.45. If the electric current measured by this photodetector is 20 mA, what is the incident optical power? (b) Silicon has a bandgap of 1.17 eV. If the photons have the wavelen and have the same optical power as in the question (a) of this problem, what is the electric current generated by this silicon photodetector? Problem 4 (25 points) ingle mode semiconductor laser at 1550 nm wavelength, a photodetector, and a single pm. The fiber length is 150 km. design of a 10 Giga Bits per second fiber optical communication system using a For optical communication fiber. The spectral line-width of the semiconductor laser is ode tat, ou need to find

Answer 1

R- 10 Pinadnt 0,5 in ら fin 1 13.45

Pinlenalで 0.04 want bl k el R, 0.5 x1550 850 R2で 0, 91176 Pnternal Zs = 0.04x 0,911"As