Question 3: (8 points) (a) A photodetector has an effective area of 6x102 cm. It is...
Problem 3 (25 points) A silicon photodetector has an internal photo responsivity of 0.5 A/Wt wavelength of 850 nm. When photons of wavelength 850 nm are incident normally on this photodetector, some photons are reflected back and some photons penetrate to the detection region and are absorbed by the photodetector. (a) The index of refraction of silicon is 3.45. If the electric current measured by this photodetector is 20 mA, what is the incident optical power? (b) Silicon has a...
1) Useful parameters for CdTe a. ni- 1e8 cm 3 2) kT 25.8mev Problem #1 (100 points) Consider an ideal, long-diode type solar cell made of a CdTe abrupt asymmetrical PN junction. The relevant properties of the p-type CdTe absorber are: thickness - 3 um, doping - le14 cm3, electron mobility 100 cm2/V/s, and electron lifetime 10 ns. The n type region is doped much higher than CdTe 1. Calculate the saturation current density 2. Calculate the short-circuit current, assuming...