ELECTRONIC CIRCUITS Describe MOSFET bias ciruits at aotive mode. Include diagram
EE2027 / TEE2027 Electronic Circuits / Page 5 Q.3 A p-channel MOSFET (P-MOSFET) has the following parameters: up Cox = 2 x 10 A/V, WIL = 20, VrH=-1 V, and 2 = 0.008 V-!. The source and the body of the p-MOSFET are shorted together. The device is operating at Vso = 4 V. (a) If VSD = 2 V, which region is the p-MOSFET operating in? Calculate the drain current. (3 marks) (b) If V sp=5 V, which region...
Describe the synchronous sequential circuits with block diagram. Also describe why it is different from combinational circuits.
1) Describe PN junction under equilibrium, forward, and backward bias conditions. Draw the band diagram together with charge density, electric field, and potential profiles across the junction. Describe the physics of charge transport (both electrons and holes) in PN junction under forward bias. Include drift, diffusion, recombinations etc in your description.
December 2013 Elec-B5, Advanced Electronics QUESTION (1) In the following circuits, assume all transistors have the following parameters: K 0.5 mA/V2, VT,-1 V and λ-0.02. Given: 1M bias I mA M M2 꼬 + 2 고 (~ 2 a) Estimate the differential gain vourlVIN in (V/V) b) Find the common mode input resistance Ricm c) Find the common mode input range. d) Estimate the common mode rejection ratio, CMRR. Express your result in dB. Useful formulae: for n-channel MOSFET (6...
3. In N-MOSFET transistor, the transistor is manufactured on top ....... substrate. In the triode mode, the channel between the source and drain are ......... channel a) P-type and N-type b) N-type and N-type c) P-type and P-type d) N-type and P-type , what is the base bias voltage? 4. If VCC = +18 V, voltage-divider resistor R1 is 4.7 k2, and R2 is 1500 a) 8.6 V b) 4.35 V c) 2.90 V d) 0.7 V 5. The ends...
with the aid of annotated diagram describe the mode of failure associated with slope in cohesive material. Describe and evaluate a stability criterion of your choice for one of these mode of failure
Exercise 7.37: Design the bias circuit for the CS amplifier. Assume the MOSFET is specified to have Vt 1 V, kn = 4mA/V2 and V4 = 100 V. Neglecting the Early effect, design for ID-0.5mA, VS= 3.5 V, VD6 V and VDD 15 V. Specify the values of RD and Rs If a current of 2 μΑ is used in the voltage divider, specify the values of RG1 and RG2. Give the values of the MOSFET parameters gm and ro...
Matlab #3-BJT/MOSFET Inverter To demonstrate the use of a BJT and MOSFET as an inverter, connect the following circuits. Use Simulink/Simscape to simulate each circuit for a peak amplitude in the AC voltage source of 5V and a frequency of i Hz. Show Vin and Vout for 3 cycles of the input source in both circuits. Comment on circuit behavior for each case. BIT circuit parameters: Vcc = 10V, RB = 10㏀, and RC-470Ω Rc Voltage Sensor Goto Sensor RB...
Create YOUR OWN flow chart/diagram showing the circulatory circuits -both systemic and pulmonary circuits. Your flow chart/diagram should include one complete "cycle" through the whole body. As a reference, BEGIN with blood leaving your TOE and going towards the heart.
Create YOUR OWN flow chart/diagram showing the circulatory circuits -both systemic and pulmonary circuits. Your flow chart/diagram should include one complete "cycle" through the whole body. As a reference, BEGIN with blood leaving your TOE and going towards the heart.
Consider an MOSFET with n+-poly gate,dx 400Á, and NA 10 cm, and Qo 5 X 1010 cm2 (a) Find VT; (b) Is it possible to apply a substrate bias such that Vr = 0? If so, what is the value of substrate bias? If not, give a reason. 10-2
Consider an MOSFET with n+-poly gate,dx 400Á, and NA 10 cm, and Qo 5 X 1010 cm2 (a) Find VT; (b) Is it possible to apply a substrate bias such that...