L = 90nm, Veff = 0.2V at 100uA of drain current. also Vbias = 0.6V
L = 90nm, Veff = 0.2V at 100uA of drain current. also Vbias = 0.6V Kn-μ.co.-280...
URGENT The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...