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The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and...
For the MOSFET bias circuit shown, what value of Rd in kilohms is needed to allow the maximum possible peak- to-peak signal swing on the drain without clipping? Use Vdd- 7V, Vss-7V, Vg-1.6V, Rs 9.1kQ...
For the MOSFET bias circuit shown, what value of Rd in kilohms is needed to allow the maximum possible peak- to-peak signal swing on the drain without clipping? Use Vdd- 7V, Vss-7V, Vg-1.6V, Rs 9.1kQ, Vt-0.6V, [Vovl - [Vgsl 0.42. (Remember that (Von IVtl) Neglect the effect of channel-length modulation and body effect. (Hint: Be sure to keep the MOSFET in saturation!) V. M1 VD RD Answer: The correct answer is: 9.6
For the MOSFET bias circuit shown, what value...
5. The NMOS and PMOS transistors in the below circuit are matched with kn’(Wn/Ln)=kp'(Wp/Lp)=1 mA/V2 and...
5. The NMOS and PMOS transistors in the below circuit are matched with kn’(Wn/Ln)=kp'(Wp/Lp)=1 mA/V2 and Vin=-Vt=1V. (20 pts) +5 V a) Which MOSFET is cut-off, NMOS (QN) or PMOS (QP) for VF-5V? Why (5 pts) Qp -5 Vo Ipp Vo VION ON -5 V b) When VF-5V, in which mode, saturation or triode, the circuit operate? Explain why? (5 pts) c) Find the drain current ipy and ipp and the voltage vo for VF-5V (10 pts)
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For the MOSFET bias circuit shown, what value of Rd in kilohms is needed to allow the maximum possible peak-to- peak signal swing on the drain without clipping? Use: Vdd = 6V, Vss =-7V, Vg = 1.5V, Rs 9.7kQ, Vt =-0.5V, and IVonl = 0.18. (Remember that [Vonl-[Vov Vgsl-Vt) Neglect the effect of channel-length modulation and body effect. (Hint: Be sure to keep the MOSFET in...
the correct answer attachd if u did not get the same asnwer DO NOT POST it...
the correct answer attachd if u did not get the same asnwer DO
NOT POST it
For the MOSFET bias circuit shown, what value of Rd in kilohms is needed to allow the maximum possible peak-to- peak signal swing on the drain without clipping? Use: Vdd = 6V, Vss =-7V, Vg = 1.5V, Rs 9.7kQ, Vt =-0.5V, and IVonl = 0.18. (Remember that [Vonl-[Vov Vgsl-Vt) Neglect the effect of channel-length modulation and body effect. (Hint: Be sure to keep the...
4. The NMOS transistor has Vt=1V and k’W/L=2mA/V2. Find the values of Rs and Rp that...
4. The NMOS transistor has Vt=1V and k’W/L=2mA/V2. Find the values of Rs and Rp that result in the MOSFET operating with an overdrive voltage of 0.5V and a drain voltage of 1.5V. (30 pts) Vod=+5 V Rp -OVD RL 15 k12 = RS -Vss=-5 V
Problem #2. All of the NMOS have kn,= 0.1 mA/V, Vt= 0.9V, λ = negligible, and...
Problem #2. All of the NMOS have kn,= 0.1 mA/V, Vt= 0.9V, λ = negligible, and L = 1μm. The widths are W3-W4-20μm, and W's 100um. You will need to design the widths W, W2 and W6. 3K 3K 8. 1K 06 01 02H1 UOUT Vin- 03 04 Q5 -5U (a) Assuming all transistors in saturation and Vint- Vin-, find all the drain currents ID1 through ID6
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25,...
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25, and V.=0.4V. (20 pts) (a) Find the value of Vas that results in saturation mode operation with a lp current of 0.1 mA. Neglect the Early effect. (2.5 pts) +1.5 V in BRD (b) Find the value of Rp that results in a de drain voltage of 0.5V. (2.5 pts) = = = (e) Find gw and r, at the de operating point specified...
An NMOS device has parameters Vin-0.8V, L-0.8um, and unCox-120 uA/V2. When the transistor is biased in...
An NMOS device has parameters Vin-0.8V, L-0.8um, and unCox-120 uA/V2. When the transistor is biased in the saturation region with Vos-1.4V, the drain current is 0.6mA. (a) What is the channel width w? (b) Find the drain current when Vos-?.4V. (c) what value of Vos puts the device at the edge of saturation?
Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig...
Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig. 4 Question 4: W a Find the value of Vas b If the threshold voltage of the NMOS = 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) e Write the formula to calculate Current (ID) for the circuit in Figure 3. Fig. 3 Question 5: V=5V ww a...
Design a common-source MOSFET amplifier such that - Rg is a multiple of 10 - Id...
Design a common-source MOSFET amplifier such that - Rg is a multiple of 10 - Id = 0.52 mA - the amplifier input resistance is in the range of mega ohms - | Avo | = 16.7 V/V - RL = 20k - Vsig has a 2kHz frequency - Rsig = 400k, and is the input and the MOSFET has: Vt = 0.8V k = 5 mA/V^2 VA = 80 V Assume capacitors are shorted in the signal circuit and...
For the MOSFET bias circuit shown, what value of Rd in kilohms is needed to allow the maximum possible peak- to-peak signal swing on the drain without clipping? Use Vdd- 7V, Vss-7V, Vg-1.6V, Rs 9.1kQ, Vt-0.6V, [Vovl - [Vgsl 0.42. (Remember that (Von IVtl) Neglect the effect of channel-length modulation and body effect. (Hint: Be sure to keep the MOSFET in saturation!) V. M1 VD RD Answer: The correct answer is: 9.6
For the MOSFET bias circuit shown, what value...
5. The NMOS and PMOS transistors in the below circuit are matched with kn’(Wn/Ln)=kp'(Wp/Lp)=1 mA/V2 and Vin=-Vt=1V. (20 pts) +5 V a) Which MOSFET is cut-off, NMOS (QN) or PMOS (QP) for VF-5V? Why (5 pts) Qp -5 Vo Ipp Vo VION ON -5 V b) When VF-5V, in which mode, saturation or triode, the circuit operate? Explain why? (5 pts) c) Find the drain current ipy and ipp and the voltage vo for VF-5V (10 pts)
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For the MOSFET bias circuit shown, what value of Rd in kilohms is needed to allow the maximum possible peak-to- peak signal swing on the drain without clipping? Use: Vdd = 6V, Vss =-7V, Vg = 1.5V, Rs 9.7kQ, Vt =-0.5V, and IVonl = 0.18. (Remember that [Vonl-[Vov Vgsl-Vt) Neglect the effect of channel-length modulation and body effect. (Hint: Be sure to keep the MOSFET in...
the correct answer attachd if u did not get the same asnwer DO
NOT POST it
For the MOSFET bias circuit shown, what value of Rd in kilohms is needed to allow the maximum possible peak-to- peak signal swing on the drain without clipping? Use: Vdd = 6V, Vss =-7V, Vg = 1.5V, Rs 9.7kQ, Vt =-0.5V, and IVonl = 0.18. (Remember that [Vonl-[Vov Vgsl-Vt) Neglect the effect of channel-length modulation and body effect. (Hint: Be sure to keep the...
4. The NMOS transistor has Vt=1V and k’W/L=2mA/V2. Find the values of Rs and Rp that result in the MOSFET operating with an overdrive voltage of 0.5V and a drain voltage of 1.5V. (30 pts) Vod=+5 V Rp -OVD RL 15 k12 = RS -Vss=-5 V
Problem #2. All of the NMOS have kn,= 0.1 mA/V, Vt= 0.9V, λ = negligible, and L = 1μm. The widths are W3-W4-20μm, and W's 100um. You will need to design the widths W, W2 and W6. 3K 3K 8. 1K 06 01 02H1 UOUT Vin- 03 04 Q5 -5U (a) Assuming all transistors in saturation and Vint- Vin-, find all the drain currents ID1 through ID6
1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25, and V.=0.4V. (20 pts) (a) Find the value of Vas that results in saturation mode operation with a lp current of 0.1 mA. Neglect the Early effect. (2.5 pts) +1.5 V in BRD (b) Find the value of Rp that results in a de drain voltage of 0.5V. (2.5 pts) = = = (e) Find gw and r, at the de operating point specified...
An NMOS device has parameters Vin-0.8V, L-0.8um, and unCox-120 uA/V2. When the transistor is biased in the saturation region with Vos-1.4V, the drain current is 0.6mA. (a) What is the channel width w? (b) Find the drain current when Vos-?.4V. (c) what value of Vos puts the device at the edge of saturation?
Vs 82 BATZ IOS = eration rrent (ID) for Fig. 3 VD 5V NMOS 10 0 BAT2 R1 1000 IOS . Triode, rrent (In) for Fig. 4 Question 4: W a Find the value of Vas b If the threshold voltage of the NMOS = 0.7V, identify the region of operation for the MOSFET (i.e. Triode Saturation or Cutoff) e Write the formula to calculate Current (ID) for the circuit in Figure 3. Fig. 3 Question 5: V=5V ww a...
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