1. Consider NMOS transistor in the circuit that has u.Cox = 0.4 mA/V?, W/L = 25,...
URGENT The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...
5. The NMOS and PMOS transistors in the below circuit are matched with kn’(Wn/Ln)=kp'(Wp/Lp)=1 mA/V2 and Vin=-Vt=1V. (20 pts) +5 V a) Which MOSFET is cut-off, NMOS (QN) or PMOS (QP) for VF-5V? Why (5 pts) Qp -5 Vo Ipp Vo VION ON -5 V b) When VF-5V, in which mode, saturation or triode, the circuit operate? Explain why? (5 pts) c) Find the drain current ipy and ipp and the voltage vo for VF-5V (10 pts)
help me please subscription 5. The PMOS transistor has Vtp=-1 V. If the voltages of three terminals are: Vg=2 V, Vs=5v, Vd=3.5V, then the transistor is operated in a) Cut off region b) Triode region c) Saturation region d) Unknown 6. The voltage transfer characteristic of a CMOS inverter is shown in Fig. 4. Threshold voltages Vrn = |Vpl = 0.5V. If Vpo=5V and the input v=3V, then Saved to this PC a) Both PMOS and NMOS in triode region...
4. The NMOS transistor has Vt=1V and k’W/L=2mA/V2. Find the values of Rs and Rp that result in the MOSFET operating with an overdrive voltage of 0.5V and a drain voltage of 1.5V. (30 pts) Vod=+5 V Rp -OVD RL 15 k12 = RS -Vss=-5 V
Q2: Consider an NMOS FET having W = 160um, L = 2um, Kn' = 50uA/V2, VIN= 2V and 2=0. Find out the regions of operation (cut-off, triode, saturation) and the drain current id for the following conditions: a) VGS = 1 V and Vds = 3V b) VGS = 3V and vps = 0.5V c) VGS = 3V and Vds = 5V
This NMOS transistor has Vt=1 V and (1/2)kn'(W/L)=1 mA/V^2. Find the operating mode (cutoff, triode, or saturation) and values for Vg, Id, Vd, and Vs. 49v Up Va (K
An NMOS transistor with parameters VTh=1 V, k’=100 uA/V2 , W = 10 um, and L=1 um has a VGS=2 V. Find the drain current when: a. VDS=0.5 V b. VDS=2 V c. VDS=3 V Answers: a) 374 uA b) 0.5 mA c) 0.5 mA please show your work :)
All nMOS transistors in the circuit shown are identical, have k' WIL 4 mA/V2 and operate in the active region lp 1/2k 'W/L(Vas-V)']. Knowing that the de voltage VD4 at the drain of Q4-2 V. Determine: 1. The value of the bias current lo 2. The value of Vov 3. The transconductance gm of Q1 and Q2 4. The voltage gain vo/v 5. The voltage gain when a source resistance R, 1K2 is added to the source of Qi and...
(25 points) Consider an NMOS transistor with L-0.18 um and W-2 um. The process technology is specified to have Cox 8.6 fF/um2, Hn = 450 cm2/V s, and Vin 0.5 V. a) Find VGs and VDs that result in the MOSFET operating at the edge of saturation with ID 100 uA. b) If VGs is kept constant, find Ip when VDs is reduced to 0.06 V
VOD Ro 1. [Design Problem (1)] N-channel MOSFET (NMOS) operating in "Saturation" region. a. Consider a circuit as shown in Fig 1. b. You will need to design the circuit such that Ip = 1 (mA), VG = 0 [V], and Vp = 5 [V]. (determine values for R1, R2, Rp, and Rs) 1 W ID = 5 unCox (Vgs - Vrh)2 = K (Vgs - VTH)2 c. Use Vpp = 15 [V], Vs = -15 [V], and 2N7000 for...