![All nMOS transistors in the circuit shown are identical, have k WIL 4 mA/V2 and operate in the active region lp 1/2k W/L(Vas-V)]. Knowing that the de voltage VD4 at the drain of Q4-2 V. Determine: 1. The value of the bias current lo 2. The value of Vov 3. The transconductance gm of Q1 and Q2 4. The voltage gain vo/v 5. The voltage gain when a source resistance R, 1K2 is added to the source of Qi and Q2 10 V D4](http://img.homeworklib.com/questions/13f73030-0629-11ec-92b1-b95ea0ed75c7.png?x-oss-process=image/resize,w_560)
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All nMOS transistors in the circuit shown are identical, have k' WIL 4 mA/V2 and operate...
5. The NMOS and PMOS transistors in the below circuit are matched with kn’(Wn/Ln)=kp'(Wp/Lp)=1 mA/V2 and...
5. The NMOS and PMOS transistors in the below circuit are matched with kn’(Wn/Ln)=kp'(Wp/Lp)=1 mA/V2 and Vin=-Vt=1V. (20 pts) +5 V a) Which MOSFET is cut-off, NMOS (QN) or PMOS (QP) for VF-5V? Why (5 pts) Qp -5 Vo Ipp Vo VION ON -5 V b) When VF-5V, in which mode, saturation or triode, the circuit operate? Explain why? (5 pts) c) Find the drain current ipy and ipp and the voltage vo for VF-5V (10 pts)
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V,...
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V, (W/L)-(W/L)2-5. VDD-GV and IBIAs= 1.0 mA. a) Assuming λ-0 for all transistors, find the required DC gate- source voltages of M1 and M2 (VGsı and VGs2, respectively) BIAS VD out b) Again assuming 0 M2 for all transistors, what is the minimum DC value of VouT for which the amplifier works in high-gain regime? (W/L)2 in M1 For parts c)-f), Assume -0.01 for all...
URGENT The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and...
URGENT
The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...
I need help with the following: 2. An NMOS differential amplifier (above, right) with identical transistors...
I need help with the following:
2. An NMOS differential amplifier (above, right) with identical transistors Q and Q2 is biased with an ideal current source of current/-0.2 mA, and has (W/L)-32, μ,Cox-200 Va: 10V, and RD-10 kΩ (a) Find Vov(-0.177 V), gm (-1.13 mA/V) ro, (100 k2), and As(-10.27 v/v). (b) Let there be mismatches of ΔRD/Ro-2%, Δ(W/L)/(W/L)-2% and Δν.-2m . what is the value of the total DC in put offset voltage Vos(-3.2 mV) caused by these mismatches?...
Please solve it clearly and by steps 8.1 For an NMOS differential pair with a common-mode...
Please solve it clearly and by steps
8.1 For an NMOS differential pair with a common-mode voltage Vay applied, as shownin Fig. 8.2, let VppV 1.0 V k, = 0.4 mA/V2. (WIL),.-10·V," 0.4 V, 1-0. 16 mA. R 5 k2, and neglect channel-length modulation. (a) Find Vov and Vos for each transistor. (b) For Vo 0, find V, lp Ip, Vo, and V (c) Repeat (b) for Vcu+0.4 V (d) Repeat (b) for Vc-0.1 V. (e) What is the highest...
4) Consider the MOSFET differential amplifier shown below, with Io-2 mA, and RL- 10 kS2, Rss-100 ...
4) Consider the MOSFET differential amplifier shown below, with Io-2 mA, and RL- 10 kS2, Rss-100 k2, VDD- +8V and Vss--8V. The NMOS transistors in the circuit are nominally identical, with kn 2 mA/V2, VTn 1.0 V and ro 100 k2. The PMoS transistors in the circuit are nominally identical, with kp 2 mA/V2, [VTpl 1.0 V and ro 100 kΩ M3 M4 0 M1 M2 a) First consider the DC bias point. Assuming that the current mirror requires at...
EXERCISE 287 5.15 The NMOS and PMOS transistors in the circuit of Fig. E5.15 are matched...
EXERCISE 287 5.15 The NMOS and PMOS transistors in the circuit of Fig. E5.15 are matched with kn(w,/L, E(WA,) = 1 mA/V2 and V, =-Vp-1 V. Assuming λ=0 for both devices, find the drain currents İDw and įDP and the voltage vo for v,-0 V, +2.5 V, and-2.5 V Ans. o V: 0 mA, O mA. 0V: v- +2.5 V: 0.104 mA, 0mA, 1.04 V: v-2.5 V: 0 mA 0.104 mA, -1.04 V +2.5V ON DN V1 DP -2.5 V...
1. Consider the following current mirror combination, where all transistors have the same kn'(W/L...
1. Consider the following current mirror combination, where all transistors have the same kn'(W/L) = kp'(W/L) = 2mA/V2, and VTN-1У, VTP--1V. It is also given that VDD1-10V, VDD2-8V. Remember that for saturation the drain current is given by IDー½ k,"(W/L) (VGS-Yn)" for NMOS and ID ½ kp"(WL) (VGS-V,»)2 for PMOS. You can ignore the channel modulation for all transistors. (a) Find the value of R so that I.-1mA. (b) Are transistors Q1, Q2, Q3 in saturation? (c) What is the...
The NMOS transistor in the circuit below has the following parameters: (W/L).(KP2)-826pA/V2, and VA-50V. ,-0.9V, K...
The NMOS transistor in the circuit below has the following parameters: (W/L).(KP2)-826pA/V2, and VA-50V. ,-0.9V, K a. Calculate the drain-to-source resistance (rds) value. (Hint: VA- 1/) b. What is the value of the transconductance (gm)? (ignore A ONLY for this part) C. What is the value of the DC voltage Vo? (ignore λ ONLY for this part) d. Draw the small-signal equivalent circuit (including rds) e. Find the equation of the small-signal voltage gain Av-Vo/vi. This equation should be in...
5. A feedback current amplifier is shown below. Assume identical devices: Vi-0.5 V and Va- 10 V. Both are sized to operate at Vov 0.2 V when I 0.2 mA -0.2 mA 0: 0 R2 3.5kD 3.5เก (a) Find gm and r...
5. A feedback current amplifier is shown below. Assume identical devices: Vi-0.5 V and Va- 10 V. Both are sized to operate at Vov 0.2 V when I 0.2 mA -0.2 mA 0: 0 R2 3.5kD 3.5เก (a) Find gm and ro for Qi and Q2 (b) Find the "A" circuit and values Ri, A, and Ro
5. A feedback current amplifier is shown below. Assume identical devices: Vi-0.5 V and Va- 10 V. Both are sized to operate at...
5. The NMOS and PMOS transistors in the below circuit are matched with kn’(Wn/Ln)=kp'(Wp/Lp)=1 mA/V2 and Vin=-Vt=1V. (20 pts) +5 V a) Which MOSFET is cut-off, NMOS (QN) or PMOS (QP) for VF-5V? Why (5 pts) Qp -5 Vo Ipp Vo VION ON -5 V b) When VF-5V, in which mode, saturation or triode, the circuit operate? Explain why? (5 pts) c) Find the drain current ipy and ipp and the voltage vo for VF-5V (10 pts)
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V, (W/L)-(W/L)2-5. VDD-GV and IBIAs= 1.0 mA. a) Assuming λ-0 for all transistors, find the required DC gate- source voltages of M1 and M2 (VGsı and VGs2, respectively) BIAS VD out b) Again assuming 0 M2 for all transistors, what is the minimum DC value of VouT for which the amplifier works in high-gain regime? (W/L)2 in M1 For parts c)-f), Assume -0.01 for all...
URGENT
The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...
I need help with the following:
2. An NMOS differential amplifier (above, right) with identical transistors Q and Q2 is biased with an ideal current source of current/-0.2 mA, and has (W/L)-32, μ,Cox-200 Va: 10V, and RD-10 kΩ (a) Find Vov(-0.177 V), gm (-1.13 mA/V) ro, (100 k2), and As(-10.27 v/v). (b) Let there be mismatches of ΔRD/Ro-2%, Δ(W/L)/(W/L)-2% and Δν.-2m . what is the value of the total DC in put offset voltage Vos(-3.2 mV) caused by these mismatches?...
Please solve it clearly and by steps
8.1 For an NMOS differential pair with a common-mode voltage Vay applied, as shownin Fig. 8.2, let VppV 1.0 V k, = 0.4 mA/V2. (WIL),.-10·V," 0.4 V, 1-0. 16 mA. R 5 k2, and neglect channel-length modulation. (a) Find Vov and Vos for each transistor. (b) For Vo 0, find V, lp Ip, Vo, and V (c) Repeat (b) for Vcu+0.4 V (d) Repeat (b) for Vc-0.1 V. (e) What is the highest...
4) Consider the MOSFET differential amplifier shown below, with Io-2 mA, and RL- 10 kS2, Rss-100 k2, VDD- +8V and Vss--8V. The NMOS transistors in the circuit are nominally identical, with kn 2 mA/V2, VTn 1.0 V and ro 100 k2. The PMoS transistors in the circuit are nominally identical, with kp 2 mA/V2, [VTpl 1.0 V and ro 100 kΩ M3 M4 0 M1 M2 a) First consider the DC bias point. Assuming that the current mirror requires at...
EXERCISE 287 5.15 The NMOS and PMOS transistors in the circuit of Fig. E5.15 are matched with kn(w,/L, E(WA,) = 1 mA/V2 and V, =-Vp-1 V. Assuming λ=0 for both devices, find the drain currents İDw and įDP and the voltage vo for v,-0 V, +2.5 V, and-2.5 V Ans. o V: 0 mA, O mA. 0V: v- +2.5 V: 0.104 mA, 0mA, 1.04 V: v-2.5 V: 0 mA 0.104 mA, -1.04 V +2.5V ON DN V1 DP -2.5 V...
1. Consider the following current mirror combination, where all transistors have the same kn'(W/L) = kp'(W/L) = 2mA/V2, and VTN-1У, VTP--1V. It is also given that VDD1-10V, VDD2-8V. Remember that for saturation the drain current is given by IDー½ k,"(W/L) (VGS-Yn)" for NMOS and ID ½ kp"(WL) (VGS-V,»)2 for PMOS. You can ignore the channel modulation for all transistors. (a) Find the value of R so that I.-1mA. (b) Are transistors Q1, Q2, Q3 in saturation? (c) What is the...
The NMOS transistor in the circuit below has the following parameters: (W/L).(KP2)-826pA/V2, and VA-50V. ,-0.9V, K a. Calculate the drain-to-source resistance (rds) value. (Hint: VA- 1/) b. What is the value of the transconductance (gm)? (ignore A ONLY for this part) C. What is the value of the DC voltage Vo? (ignore λ ONLY for this part) d. Draw the small-signal equivalent circuit (including rds) e. Find the equation of the small-signal voltage gain Av-Vo/vi. This equation should be in...
5. A feedback current amplifier is shown below. Assume identical devices: Vi-0.5 V and Va- 10 V. Both are sized to operate at Vov 0.2 V when I 0.2 mA -0.2 mA 0: 0 R2 3.5kD 3.5เก (a) Find gm and ro for Qi and Q2 (b) Find the "A" circuit and values Ri, A, and Ro
5. A feedback current amplifier is shown below. Assume identical devices: Vi-0.5 V and Va- 10 V. Both are sized to operate at...
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