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1. Consider the following current mirror combination, where all transistors have the same kn'(W/L...
Consider the following current mirror combination, where all transistors have the same kn'(W/L) =...
Consider the following current mirror
combination, where all transistors have the same
kn'(W/L) =
kp'(W/L) =
2mA/V2, and VTN =
1V, VTP = -1V. It is also given that VDD1 =
10V, VDD2 = 8V. Remember that for saturation the drain
current is given by ID = ½
kn'(W/L)
(VGS –
VTN)2 for NMOS and
ID = ½
kp'(W/L)
(VGS –
VTP)2 for PMOS. You can
ignore the channel modulation for all transistors.
Find the value of R so that...
Draw the circuit of a common source amplifier, which is biased by a MOSFET current mirror,...
Draw the circuit of a common source amplifier, which is biased by a MOSFET current mirror, and which uses only one capacitor and two resistors (including the RREF of the current mirror). Assume that the input to the amplifier is a zero-DC signal. Then, design the amplifier to achieve a gain Avo--gRo =-4V/V, and an output resistance Ro-Ro-1K. Ignore channel modulation. Assume that all MOSFETS are identical with VIN-1V, and Kn = 2mA/V. Use Vo = 5V and Vs =-5V....
Q5: Consider the following Multistage amplifier with kn' = 160 uA/V?, kp' = 40 A/V, and...
Q5: Consider the following Multistage amplifier with kn' = 160 uA/V?, kp' = 40 A/V, and Vtn=0.7 V, Vtp=-0.8 V. All the transistors operate at IREF = 90 A , VoV=0.3 V, VA| = 10V for all devices VDD - VSS - 2.5V (Note ID1 = ID2 = ID3 = ID4 = ID5/2 =4541A) and ID5 = ID = ID8 =ID6= Iref (a) Identify the different stages of the amplifiers (b) Design the circuit i.e. find W/L of all transistors...
transistors, one and L and L 20 μ m, and 40 μ m os current mirror...
transistors, one and L and L 20 μ m, and 40 μ m os current mirror consists of three PMOS e diode connected and two used as current ts. All transistors have lv,1-06 v, k 100 μ A/V" outputsL0μ m but three different widths, namely, 10 μm. m. When the diode-connected transistor is a 100-HA source, how many different output available? Repeat with two of the transistors diode and the third used to provide current output. For le input-diode combination,...
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V,...
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V, (W/L)-(W/L)2-5. VDD-GV and IBIAs= 1.0 mA. a) Assuming λ-0 for all transistors, find the required DC gate- source voltages of M1 and M2 (VGsı and VGs2, respectively) BIAS VD out b) Again assuming 0 M2 for all transistors, what is the minimum DC value of VouT for which the amplifier works in high-gain regime? (W/L)2 in M1 For parts c)-f), Assume -0.01 for all...
2. In the following current mirror circuit, Vcc -10V, and the three transistors, Q1, Q2, Q3, have...
2. In the following current mirror circuit, Vcc -10V, and the three transistors, Q1, Q2, Q3, have the same saturation current (i.e.,IssIs), and with V for active mode is 0.7V. Then, the three beta values are given by: β91-100, ßQ2-50, and ßQ3-200. The thermal voltage is ντ-25mV. Assuming that you need an output current of i1mA: ref db (a) Find the collector, base, and emitter current for all three Q1 O2 transistors when ia 1mA. (b) Find the refern ie....
R, Figure P7.49 .50 Figure P7.50 shows a current source realized using a current mirror with two matched transistors Q, and o, . Two equal resistances R, are inserted in the source leads to increase...
R, Figure P7.49 .50 Figure P7.50 shows a current source realized using a current mirror with two matched transistors Q, and o, . Two equal resistances R, are inserted in the source leads to increase the output resistance of the current source. If Q, is operating at gm 1 mA/V and has VA-= 10 V, and if the maximum allowed de voltage drop across R, is 0.3 V, what is the maximum avail- able output resistance of the current source?...
Problem #5 The NMOS transistors in the circuits below have V, = 1V and (12)k,'(W/L) =...
Problem #5 The NMOS transistors in the circuits below have V, = 1V and (12)k,'(W/L) = 1 mA/V2. For each circuit find the operating mode (cutoff, triode, or saturation) and values for VG, ID, VD, and Vs 수+9. 1. 2K 1. 2K 470K 47GK LK 1K
7. Consider an ideal n-channel silicon MOSFET with the following device parameters: VT --0.8 V, μ...
Vgs for part b, not Vds
7. Consider an ideal n-channel silicon MOSFET with the following device parameters: VT --0.8 V, μ,-425 cm2V-1 s-1, tox-11 nm, w: 20 μm' and L-1.2 μm at T-300 K. nm, W- 20 a) Plot the drain current ID [mA] versus drain-source voltage Vos over the range 0 < VD 3V with VGS--0.8 V, VGs 0 V and Vas +0.8 V b) Plot root saturation current ID12(sat) [mA12] versus gate-source voltage V6s over the range...
Compute the following for the pseudo-NMOS inverter shown in Figure. VTn=0.45V. VTp=. 0.45V kn-115uA/V2.kp'--304A/V2, VDSATn=0.4V, VDSATp=...
Compute the following for the pseudo-NMOS inverter shown in Figure. VTn=0.45V. VTp=. 0.45V kn-115uA/V2.kp'--304A/V2, VDSATn=0.4V, VDSATp= -0.4V. Transistors are short channel devices. a. VOL and VOH b. Which is expected to have a higher value? NML or NMH? Why? c. Why is the circuit called a pseudo-NMOS inverter? d. The power dissipation: (1) for Vin low, and (2) for Vin high. Output load is 1 pF e. For an output load of 1 pF, calculate tpLH and tpHL. Are the...
Consider the following current mirror
combination, where all transistors have the same
kn'(W/L) =
kp'(W/L) =
2mA/V2, and VTN =
1V, VTP = -1V. It is also given that VDD1 =
10V, VDD2 = 8V. Remember that for saturation the drain
current is given by ID = ½
kn'(W/L)
(VGS –
VTN)2 for NMOS and
ID = ½
kp'(W/L)
(VGS –
VTP)2 for PMOS. You can
ignore the channel modulation for all transistors.
Find the value of R so that...
Draw the circuit of a common source amplifier, which is biased by a MOSFET current mirror, and which uses only one capacitor and two resistors (including the RREF of the current mirror). Assume that the input to the amplifier is a zero-DC signal. Then, design the amplifier to achieve a gain Avo--gRo =-4V/V, and an output resistance Ro-Ro-1K. Ignore channel modulation. Assume that all MOSFETS are identical with VIN-1V, and Kn = 2mA/V. Use Vo = 5V and Vs =-5V....
Q5: Consider the following Multistage amplifier with kn' = 160 uA/V?, kp' = 40 A/V, and Vtn=0.7 V, Vtp=-0.8 V. All the transistors operate at IREF = 90 A , VoV=0.3 V, VA| = 10V for all devices VDD - VSS - 2.5V (Note ID1 = ID2 = ID3 = ID4 = ID5/2 =4541A) and ID5 = ID = ID8 =ID6= Iref (a) Identify the different stages of the amplifiers (b) Design the circuit i.e. find W/L of all transistors...
transistors, one and L and L 20 μ m, and 40 μ m os current mirror consists of three PMOS e diode connected and two used as current ts. All transistors have lv,1-06 v, k 100 μ A/V" outputsL0μ m but three different widths, namely, 10 μm. m. When the diode-connected transistor is a 100-HA source, how many different output available? Repeat with two of the transistors diode and the third used to provide current output. For le input-diode combination,...
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V, (W/L)-(W/L)2-5. VDD-GV and IBIAs= 1.0 mA. a) Assuming λ-0 for all transistors, find the required DC gate- source voltages of M1 and M2 (VGsı and VGs2, respectively) BIAS VD out b) Again assuming 0 M2 for all transistors, what is the minimum DC value of VouT for which the amplifier works in high-gain regime? (W/L)2 in M1 For parts c)-f), Assume -0.01 for all...
2. In the following current mirror circuit, Vcc -10V, and the three transistors, Q1, Q2, Q3, have the same saturation current (i.e.,IssIs), and with V for active mode is 0.7V. Then, the three beta values are given by: β91-100, ßQ2-50, and ßQ3-200. The thermal voltage is ντ-25mV. Assuming that you need an output current of i1mA: ref db (a) Find the collector, base, and emitter current for all three Q1 O2 transistors when ia 1mA. (b) Find the refern ie....
R, Figure P7.49 .50 Figure P7.50 shows a current source realized using a current mirror with two matched transistors Q, and o, . Two equal resistances R, are inserted in the source leads to increase the output resistance of the current source. If Q, is operating at gm 1 mA/V and has VA-= 10 V, and if the maximum allowed de voltage drop across R, is 0.3 V, what is the maximum avail- able output resistance of the current source?...
Problem #5 The NMOS transistors in the circuits below have V, = 1V and (12)k,'(W/L) = 1 mA/V2. For each circuit find the operating mode (cutoff, triode, or saturation) and values for VG, ID, VD, and Vs 수+9. 1. 2K 1. 2K 470K 47GK LK 1K
Vgs for part b, not Vds
7. Consider an ideal n-channel silicon MOSFET with the following device parameters: VT --0.8 V, μ,-425 cm2V-1 s-1, tox-11 nm, w: 20 μm' and L-1.2 μm at T-300 K. nm, W- 20 a) Plot the drain current ID [mA] versus drain-source voltage Vos over the range 0 < VD 3V with VGS--0.8 V, VGs 0 V and Vas +0.8 V b) Plot root saturation current ID12(sat) [mA12] versus gate-source voltage V6s over the range...
Compute the following for the pseudo-NMOS inverter shown in Figure. VTn=0.45V. VTp=. 0.45V kn-115uA/V2.kp'--304A/V2, VDSATn=0.4V, VDSATp= -0.4V. Transistors are short channel devices. a. VOL and VOH b. Which is expected to have a higher value? NML or NMH? Why? c. Why is the circuit called a pseudo-NMOS inverter? d. The power dissipation: (1) for Vin low, and (2) for Vin high. Output load is 1 pF e. For an output load of 1 pF, calculate tpLH and tpHL. Are the...
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