transistors, one and L and L 20 μ m, and 40 μ m os current mirror...
1. Consider the following current mirror combination, where all transistors have the same kn'(W/L) = kp'(W/L) = 2mA/V2, and VTN-1У, VTP--1V. It is also given that VDD1-10V, VDD2-8V. Remember that for saturation the drain current is given by IDー½ k,"(W/L) (VGS-Yn)" for NMOS and ID ½ kp"(WL) (VGS-V,»)2 for PMOS. You can ignore the channel modulation for all transistors. (a) Find the value of R so that I.-1mA. (b) Are transistors Q1, Q2, Q3 in saturation? (c) What is the...
Consider the following current mirror combination, where all transistors have the same kn'(W/L) = kp'(W/L) = 2mA/V2, and VTN = 1V, VTP = -1V. It is also given that VDD1 = 10V, VDD2 = 8V. Remember that for saturation the drain current is given by ID = ½ kn'(W/L) (VGS – VTN)2 for NMOS and ID = ½ kp'(W/L) (VGS – VTP)2 for PMOS. You can ignore the channel modulation for all transistors. Find the value of R so that...
Ignore PSpice Simulation Design the MOSFET current mirror shown in Figure 2 to replicate a 1 mA reference current at the drain ofM2. Assume Vtn-1.2 V, L-100 μm, W-100 μm, kh-0.093 A/V2, and V,-100 1. Determine Ri such that IREF 1 mA is the current, Ipi, flowing into the drain of Mi. 2. Calculate lolREF, where lo = 1D2. 3. Simulate the circuit in Figure 2 in PSpice. Use the SEDRA LIB library for the MOSFET transistors and enter the...
2. In the following current mirror circuit, Vcc -10V, and the three transistors, Q1, Q2, Q3, have the same saturation current (i.e.,IssIs), and with V for active mode is 0.7V. Then, the three beta values are given by: β91-100, ßQ2-50, and ßQ3-200. The thermal voltage is ντ-25mV. Assuming that you need an output current of i1mA: ref db (a) Find the collector, base, and emitter current for all three Q1 O2 transistors when ia 1mA. (b) Find the refern ie....
1 bias V. out 2 2:1 mirror 6:52 PMw Variahle 2:1 mirror S Transistor PMOS Transistor Variable NMO 1 00 0.5 0.10 35 0.5 0.20 VT (V) A (1M) L (um) Vdd is 3V The bias current is 40μΑ the bias voltage at the rot. Vin-is2.8V, and thie voltage ut port a is O.7V. The load capacitance (CL) is Sp The NMOS current mirror is 2:1 NOTE: All 3 devices are NMOS above Include proper units for full credit and...
(12 points) Consider the following MOS current mirror circuit. Let IREF-45 μΑ, k, = 25 ㎂/V2, Vtn = 0.75 V, and λ = 0.01 V-1. The indicated ratios are the W/L for the individual transistors. Find the values of all three output currents. a) O +10 V +8 V +12 V IREF 1o 02 04 10 20 40 4 M2 4
R, Figure P7.49 .50 Figure P7.50 shows a current source realized using a current mirror with two matched transistors Q, and o, . Two equal resistances R, are inserted in the source leads to increase the output resistance of the current source. If Q, is operating at gm 1 mA/V and has VA-= 10 V, and if the maximum allowed de voltage drop across R, is 0.3 V, what is the maximum avail- able output resistance of the current source?...
1) A buck chopper like that in Figure I has the following data 250 μΗ, D E 40 V, T Find: 50 μ. L 0.4, C-60 μF, and R 10 Ω. ) the value of L necessary for the continuous current mode (b) Vc (c) Imax and Imin (d) Av r like that in Figure 1 requires an output power of 100 at an output voltage of 24 V from a 60-V supply. The switching fre- quency is 60 kHz....
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os, is so large it may be neglected. 0) Calculate the open circuit voltage gain Av Yout/ Vis. i) The amplifier has a load of 10 k2. Determine the current gain Va. = 12 V 150k 4k3 Vout Vin 200k GND = 0 V Figure 4b a) State the name...
3. In the circuit shown below, the differential pair (Mand M2) is biased with a current miror that consists of M3, M and Rref. The circuit parameters are: VDD-3 V, Rre/-15 ka, RD = 20 ka, and RL-40 kn. The transistors 25 M, and M, are identicalwith()M and M, are identical with (The oh M and M4 are identical with = ·The other transistor parameters are: indox-: 0.1 m1A/V2,VTN-0.5 V, γ-0 (body effect coefficient) and λ 0 (channel length modulation...