Question

An NMOS device has parameters Vin-0.8V, L-0.8um, and unCox-120 uA/V2. When the transistor is biased in the saturation region with Vos-1.4V, the drain current is 0.6mA. (a) What is the channel width w? (b) Find the drain current when Vos-?.4V. (c) what value of Vos puts the device at the edge of saturation?
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Sol: Vasご L. 3 sキ. D S Rin (6.6)(о.4)-上@,4 ise o χ沰6x こ ao VOS 스 V7S-Vt.- I.cp-a,g

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