An NMOS device has parameters Vin-0.8V, L-0.8um, and unCox-120 uA/V2. When the transistor is biased in...
An NMOS transistor with parameters VTh=1 V, k’=100 uA/V2 , W = 10 um, and L=1 um has a VGS=2 V. Find the drain current when: a. VDS=0.5 V b. VDS=2 V c. VDS=3 V Answers: a) 374 uA b) 0.5 mA c) 0.5 mA please show your work :)
Consider an nMOS transistor with VTH = 0.4 V, Kn = 140μA/V2 , length, L = 0.25μm, and width, W = 1.25μm. (a) Given that VGS = 1V, determine the range of values of VDS for which the device is in the saturation region. (b) Given that VGS = 1V, determine the range of values of VDS for which the device is in the triode/linar region. (c) Plot IDS vs VGS for operation in the saturation region. Ignore channel length...
Q5. Below figure is a LONG-channel NMOS device biased with two voltage source (Ves and Vos). Assuming this NMOS has a threshold voltage V, of 0.5V, mobility 350cm-NV m, oxide thickness of 10nm, and relative permittivity of 3.9. Calculate the drain current Ing with below bias configurations: (0) Ves = 2V, Vos = 1V, W/L = 4; (ii) Vas = 1V, Vos = 3V, W/L = 2;
URGENT The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...
5). In this problem, you are asked to consider the ac hybrid-t model for an NMOS transistor and to relate the capacitors to the physical device structure. Recall the oxide capacitance per unit area (Cox) appears in the DC ID-Vos relationship for triode and saturation regions. The NMOS transistor has kn-0.2 mA/V2, w-10 μm, L-1 μm and μ,-1000 cm2/Vsec. a) Find the total gate-to-channel capacitance for small Vos, CG-cho. Hint: this is the parallel-plate capacitance between the gate and the...
Problem Three An NMOS transistor has the following parameters and is being operated in the saturation region: Vin = 0.6 V and kn = 0.5 mA/V2 c) If Vas = 10 V, W/L = 20, VA = 100 V and Vps = 6 V, determine ro (note: there is more than one way to find this value). 16 = 0 19 + 9
5). In this problem, you are asked to consider the ac hybrid-x model for an NMOS transistor and to relate the capacitors to the physical device structure. Recall the oxide capacitance per unit area ox) appears in the DC Ip-Vs relationship for triode and saturation regions. The NMOS transistor has kn-0.2 mA/V2, W 10 μm, L-I μm and μ,-1000 cm2/Vsec. a) Find the total gate-to-channel capacitance for small VDs, CG-cho. Hint: this is the parallel-plate capacitance between the gate and...
An n-channel MOSFET has parameters VTN = 0.75 V, W = 40 µm, L = 4 µm, tox = 450 Å, and µn = 650 cm2/V-s. Determine the value of the drain current if the transistor is biased in the saturation region and VGS = 2 VTN.
Q2: Consider an NMOS FET having W = 160um, L = 2um, Kn' = 50uA/V2, VIN= 2V and 2=0. Find out the regions of operation (cut-off, triode, saturation) and the drain current id for the following conditions: a) VGS = 1 V and Vds = 3V b) VGS = 3V and vps = 0.5V c) VGS = 3V and Vds = 5V
(25 points) Consider an NMOS transistor with L-0.18 um and W-2 um. The process technology is specified to have Cox 8.6 fF/um2, Hn = 450 cm2/V s, and Vin 0.5 V. a) Find VGs and VDs that result in the MOSFET operating at the edge of saturation with ID 100 uA. b) If VGs is kept constant, find Ip when VDs is reduced to 0.06 V