A high-speed germanium PIN photodiode has a depletion width of 10 _m and a reverse-bias voltage of 10 V. The hole mobility in Ge is _ 0.2 m2/(Vs), the saturation velocity is _ 7 × 104 m/s, and the refractive index at 1300 nm is _ 4.3. (a) Determine the transit time limit to the response time, and calculate the corresponding 3 dB electrical bandwidth. (b) If light of wavelength 1300 nm is detected, determine the fraction of incident light that is absorbed in the depletion region (include the reflection loss from the air–Ge interface). (c) Repeat part b if the detected wavelength is 1600 nm. See Fig. 13-16 for Ge absorption coefficient.
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A silicon photodiode is configured as shown in Fig. 14-18 with a 90 V bias voltage. The light to be detected has intensity 20 _W/cm2 and wavelength 920 nm. Relevant material properties for the detector are: absorption efficiency = 0.18, dark current density at room temperature = 15 nA/cm2, charge carrier mobility = 0.048 m2/Vs, and carrier saturation velocity = 105 m/s. At the applied bias voltage, it is known that the width of the depletion region is 0.2 mm....
A silicon p–n junction photodiode has junction area 1 cm2, and doping levels 1014 and 1016 cm–3 on the n and p sides, respectively. It is reverse biased with 15 V and a 10 k_ load resistor is used. (a) Determine the 3 dB electrical bandwidth due to the RC time constant. (b) Determine the bandwidth due to the hole transit time. (c) What is the limiting bandwidth in this case?