Question

Photodiode Detectors

A silicon p–n junction photodiode has junction area 1 cm2, and doping levels 1014 and 1016 cm–3 on the n and p sides, respectively. It is reverse biased with 15 V and a 10 k_ load resistor is used. (a) Determine the 3 dB electrical bandwidth due to the RC time constant. (b) Determine the bandwidth due to the hole transit time. (c) What is the limiting bandwidth in this case?


0 0
Add a comment Improve this question Transcribed image text
Request Professional Answer

Request Answer!

We need at least 10 more requests to produce the answer.

0 / 10 have requested this problem solution

The more requests, the faster the answer.

Request! (Login Required)


All students who have requested the answer will be notified once they are available.
Know the answer?
Add Answer to:
Photodiode Detectors
Your Answer:

Post as a guest

Your Name:

What's your source?

Earn Coins

Coins can be redeemed for fabulous gifts.

Similar Homework Help Questions
  • Photodiode Detectors

    A silicon photodiode is configured as shown in Fig. 14-18 with a 90 V bias voltage. The light to be detected has intensity 20 _W/cm2 and wavelength 920 nm. Relevant material properties for the detector are: absorption efficiency = 0.18, dark current density at room temperature = 15 nA/cm2, charge carrier mobility = 0.048 m2/Vs, and carrier saturation velocity = 105 m/s. At the applied bias voltage, it is known that the width of the depletion region is 0.2 mm....

  • Photodiode Detectors

    Assume the total response time of a silicon photodiode can be taken as the sum of the transit time (limited by saturation velocity 105 m/s) and the RC rise time tr. Derive an expression for the optimum intrinsic region thickness d. If the load resistance is 50 _ and the detector area is 0.01 mm2, calculate d and the resulting detector bandwidth.

  • Photodiode Detectors

    A high-speed germanium PIN photodiode has a depletion width of 10 _m and a reverse-bias voltage of 10 V. The hole mobility in Ge is _ 0.2 m2/(Vs), the saturation velocity is _ 7 × 104 m/s, and the refractive index at 1300 nm is _ 4.3. (a) Determine the transit time limit to the response time, and calculate the corresponding 3 dB electrical bandwidth. (b) If light of wavelength 1300 nm is detected, determine the fraction of incident light...

  • Photodiode Detectors

    14.1 A photodiode with responsivity 0.3 A/W and dark current 2 nA is biased in the photoconductive mode, with a 9 V battery and 500 k_ resistor. Make a sketch like that of Fig. 14-3, showing the load line and the diode curves for incident powers from zero to 100 _W in steps of 20 _W. Circle the operating point for an incident power of 40 _W, and determine the approximate diode voltage from the graph.

  • Photodiode Detectors

    A silicon solar cell has area 50 cm2, reverse-saturation current 0.75 _A, _ = 2. The electrical power generated in the 0.4 _ load resistor is 894 mW. Determine (a) The circuit current i, (b) the photocurrent i_, (c) the optical power incident on the cell, assuming that 80% is absorbed, and (d) the optical-to-electrical conversion efficiency of the cell. Assume the temperature remains near 300 K. Assume _ = 500 nm for the incident light.

  • photodiode

    Assume that the total time response of a vacuum photodiode is given by the sum ofthe transit time and the RC time constant. (a) Derive an expression for the plateseparation d that minimizes the total response time. Put your answer in terms of theapplied voltage V0, the plate area A, and the load resistor R. (b) Calculate this optimumplate separation for parallel plates of diameter 2 cm, a voltage 2.5 kV, and aload resistance 50 _. Repeat for a load...

  • Photodiode Detectors

    Consider the transimpedance amplifier optical receiver shown in Fig. 14-19. Thefeedback resistance is 10 k_ and the feedback capacitance is 0.2 pF. The diode’s capacitance is 5 pF, and its responsivity is 0.5 A/W. The incident optical power is 0.5 mW. (a) Compute the signal current. (b) Compute the receiver’s output voltage. (c) Compute the receiver’s 3 dB electrical bandwidth. (d) Compute the rms thermal-noise current generated in the feedback resistor, assuming a temperature of 300K. (e) Assuming no dark...

  • 3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd ...

    3. A silicon step junction has uniform impurity doping concentrations of N. 5 x 1015 cm-3 and Nd = 1 x 1015 cm-, and a cross-sectional area of A-|0-4 cm2. Let tao -0.4 s and tpo 0.1 us. Consider the geometry in Figure.Calculate (a) the ideal reverse saturation current due to holes, (b) the ideal reverse saturation current due to electrons, (c) the hole concentration at a, if V V and (d) the electron current at x = x" +...

  • 3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region wi...

    3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...

  • please answer 7.17, i put 7.10 for reference. Consider a uniformly doped silicon pn junction with...

    please answer 7.17, i put 7.10 for reference. Consider a uniformly doped silicon pn junction with doping concentrations N 2 x 7.10 = 1017 cm3and N = 4 X 1016 cm3. (a) Determine Vhi at T = 300 K. (b) Determine the temperature at which Vhi increases by 2 percent. (Trial and error may have to be used.) 7.17 Consider the pn junction described in Problem 7.10 for T = 300 K. The cross- sectional area of the junction is...

ADVERTISEMENT
Free Homework Help App
Download From Google Play
Scan Your Homework
to Get Instant Free Answers
Need Online Homework Help?
Ask a Question
Get Answers For Free
Most questions answered within 3 hours.
ADVERTISEMENT
ADVERTISEMENT
ADVERTISEMENT