Photodiode Detectors
A silicon solar cell has area 50 cm2, reverse-saturation current 0.75 _A, _ = 2. The electrical power generated in the 0.4 _ load resistor is 894 mW. Determine (a) The circuit current i, (b) the photocurrent i_, (c) the optical power incident on the cell, assuming that 80% is absorbed, and (d) the optical-to-electrical conversion efficiency of the cell. Assume the temperature remains near 300 K. Assume _ = 500 nm for the incident light.
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Photodiode Detectors
Consider the transimpedance amplifier optical receiver shown in Fig. 14-19. Thefeedback resistance is 10 k_ and the feedback capacitance is 0.2 pF. The diode’s capacitance is 5 pF, and its responsivity is 0.5 A/W. The incident optical power is 0.5 mW. (a) Compute the signal current. (b) Compute the receiver’s output voltage. (c) Compute the receiver’s 3 dB electrical bandwidth. (d) Compute the rms thermal-noise current generated in the feedback resistor, assuming a temperature of 300K. (e) Assuming no dark...
Photodiode Detectors
A silicon photodiode is configured as shown in Fig. 14-18 with a 90 V bias voltage. The light to be detected has intensity 20 _W/cm2 and wavelength 920 nm. Relevant material properties for the detector are: absorption efficiency = 0.18, dark current density at room temperature = 15 nA/cm2, charge carrier mobility = 0.048 m2/Vs, and carrier saturation velocity = 105 m/s. At the applied bias voltage, it is known that the width of the depletion region is 0.2 mm....
Photodiode Detectors
A high-speed germanium PIN photodiode has a depletion width of 10 _m and a reverse-bias voltage of 10 V. The hole mobility in Ge is _ 0.2 m2/(Vs), the saturation velocity is _ 7 × 104 m/s, and the refractive index at 1300 nm is _ 4.3. (a) Determine the transit time limit to the response time, and calculate the corresponding 3 dB electrical bandwidth. (b) If light of wavelength 1300 nm is detected, determine the fraction of incident light...
A silicon photoconductive photoconductor maintained at room temperature, has the following dimensions : length=5 mm, width=0.5...
A silicon photoconductive photoconductor maintained at room temperature, has the following dimensions : length=5 mm, width=0.5 mm, and height = 0.5 mm. A voltage of 2V is applied along the length of the photoconductor. Parameters for Silicon at room temperature : µn = 1,350 cm2/volt-sec µp = 850 cm2/volt-sec ni = 1 x 1010 /cm3 Calculate the dark current. The photoconductor is next irradiated with a green LED (λ = 500 nm) with 100 mW/cm3 uniform optical power all across the...
Consider a typical optical receiver that contains a InGaAs pin photodiode, a load resistor, and an...
Consider a typical optical receiver that contains a InGaAs pin photodiode, a load resistor, and an amplifier. The receiver has the following parameters at the wavelength 1.15e-5 m: The dark current is 5.0 nA, the quantum efficiency is 0.85, and the surface leakage current is negligible. The incident optical power is 3 mW, load resistance is 50 ohm, and the effective noise bandwidth of the receiver is 1 GHz. (1) Determine the photocurrent Iph . (2) Calculate...
Problem 3 (25 points) A silicon photodetector has an internal photo responsivity of 0.5 A/Wt wavelength of 850 nm. When photons of wavelength 850 nm are incident normally on this photodetector, so...
Problem 3 (25 points) A silicon photodetector has an internal photo responsivity of 0.5 A/Wt wavelength of 850 nm. When photons of wavelength 850 nm are incident normally on this photodetector, some photons are reflected back and some photons penetrate to the detection region and are absorbed by the photodetector. (a) The index of refraction of silicon is 3.45. If the electric current measured by this photodetector is 20 mA, what is the incident optical power? (b) Silicon has a...
Example Key Parameters A silicon solar cell (bandgap 1.12 eV) is uniformly illuminated by monochromatic light...
Example Key Parameters A silicon solar cell (bandgap 1.12 eV) is uniformly illuminated by monochromatic light of wavelength 600 nm and intensity 40 mW/cm2. Given that its external quantum efficiency at this wavelength is 0.9 the ideality factor is 1.5, and the dark saturation current density is 3 pA/cm2 i calculate the short circuit current of the cell if its area is 2 cmA2 calculate the open circuit voltage iii) fill factor iv) energy conversion efficiency
1) Useful parameters for CdTe a. ni- 1e8 cm 3 2) kT 25.8mev Problem #1 (100 points) Consider an ideal, long-diode type solar cell made of a CdTe abrupt asymmetrical PN junction. The relevant properti...
1) Useful parameters for CdTe a. ni- 1e8 cm 3 2) kT 25.8mev Problem #1 (100 points) Consider an ideal, long-diode type solar cell made of a CdTe abrupt asymmetrical PN junction. The relevant properties of the p-type CdTe absorber are: thickness - 3 um, doping - le14 cm3, electron mobility 100 cm2/V/s, and electron lifetime 10 ns. The n type region is doped much higher than CdTe 1. Calculate the saturation current density 2. Calculate the short-circuit current, assuming...
A Si photodiode with a 1 mm^2 area has a dark current i_drk = 0.5 nA...
A Si photodiode with a 1 mm^2 area has a dark current i_drk = 0.5 nA and a responsivity, R = 0.2 A/W at 500 nm. It is operated with (reverse) bias. Assume B_3dB = 10 Hz electrical bandwidth and 500 nm monochromatic light. Do NOT include amplifier Johnson noise. (a) What is its quantum efficiency, ηqe? (b) What is its dark current noise? (c) What is the photon equivalent of the dark current noise? (d) What is the noise...
Surface Recombination: Suppose I have a sample of 10 μm thick silicon illuminated under 775 nm...
Surface Recombination: Suppose I have a sample of 10 μm thick silicon illuminated under 775 nm wavelength light (absorption coefficient 10' cm) at an intensity of 50 mW/cm2. The surface recombination velocity and bulk minority carrier lifetime are 10 em/s (for both respectively. Assume Δη and Δp are » no or po- surfaces) and 10 us, Why is surface recombination referred as a velocity? What is the estimated short circuit current assuming no bulk or surface recombination and perfect transmittance...
Problem 3 (25 points) A silicon photodetector has an internal photo responsivity of 0.5 A/Wt wavelength of 850 nm. When photons of wavelength 850 nm are incident normally on this photodetector, some photons are reflected back and some photons penetrate to the detection region and are absorbed by the photodetector. (a) The index of refraction of silicon is 3.45. If the electric current measured by this photodetector is 20 mA, what is the incident optical power? (b) Silicon has a...
Example Key Parameters A silicon solar cell (bandgap 1.12 eV) is uniformly illuminated by monochromatic light of wavelength 600 nm and intensity 40 mW/cm2. Given that its external quantum efficiency at this wavelength is 0.9 the ideality factor is 1.5, and the dark saturation current density is 3 pA/cm2 i calculate the short circuit current of the cell if its area is 2 cmA2 calculate the open circuit voltage iii) fill factor iv) energy conversion efficiency
1) Useful parameters for CdTe a. ni- 1e8 cm 3 2) kT 25.8mev Problem #1 (100 points) Consider an ideal, long-diode type solar cell made of a CdTe abrupt asymmetrical PN junction. The relevant properties of the p-type CdTe absorber are: thickness - 3 um, doping - le14 cm3, electron mobility 100 cm2/V/s, and electron lifetime 10 ns. The n type region is doped much higher than CdTe 1. Calculate the saturation current density 2. Calculate the short-circuit current, assuming...
Surface Recombination: Suppose I have a sample of 10 μm thick silicon illuminated under 775 nm wavelength light (absorption coefficient 10' cm) at an intensity of 50 mW/cm2. The surface recombination velocity and bulk minority carrier lifetime are 10 em/s (for both respectively. Assume Δη and Δp are » no or po- surfaces) and 10 us, Why is surface recombination referred as a velocity? What is the estimated short circuit current assuming no bulk or surface recombination and perfect transmittance...
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