Parameters for Silicon at room temperature (T=300K) u = 1,350 cm'/volt-sec u = 850 cm/volt-sec n...
A silicon photoconductive photoconductor maintained at room temperature, has the following dimensions : length=5 mm, width=0.5 mm, and height = 0.5 mm. A voltage of 2V is applied along the length of the photoconductor. Parameters for Silicon at room temperature : µn = 1,350 cm2/volt-sec µp = 850 cm2/volt-sec ni = 1 x 1010 /cm3 Calculate the dark current. The photoconductor is next irradiated with a green LED (λ = 500 nm) with 100 mW/cm3 uniform optical power all across the...
Your supervisor tasked you to design a square cross-section silicon p-n junction diode with the following specifications: 1. Intrinsic concentration at 300K: n. = 1.5x 10"/cmº. 2. p-side doping: N = 101/cm. 2. n-side doping: No = 1021/cm. 3. QNR length: W, =W, = 1 um. (a) Determine the sidelength so that the turn-on voltage of the designed diode to be 0.7V if the current rating of the diode is to be specified as 1 mA at room temperature. [Hint:...
Your supervisor tasked you to design a square cross-section silicon p-n junction diode with the following specifications: 1. Intrinsic concentration at 300K: n; = 1.5x 101° /cmº. 2. p-side doping: N = 1018/cm. 2. n-side doping: N = 1021/cm. 3. QNR length: W=W, = 1 um. p (a) Determine the sidelength so that the turn-on voltage of the designed diode to be 0.7V if the current rating of the diode is to be specified as 1 mA at room temperature....
Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε' = 1 1 .7x 8.854x 10-14 Flon;ー-0.025 V Assume the critical field to be equal to 3x105 V/cm. a) (5 points) Compare the hole density at xn to the electron density at-Xp b) (5 points) Compare the hole current at xn to...