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Your supervisor tasked you to design a square cross-section silicon p-n junction diode with the following...
Your supervisor tasked you to design a square cross-section silicon p-n junction diode with the following...
Your supervisor tasked you to design a square cross-section silicon p-n junction diode with the following specifications: 1. Intrinsic concentration at 300K: n; = 1.5x 101° /cmº. 2. p-side doping: N = 1018/cm. 2. n-side doping: N = 1021/cm. 3. QNR length: W=W, = 1 um. p (a) Determine the sidelength so that the turn-on voltage of the designed diode to be 0.7V if the current rating of the diode is to be specified as 1 mA at room temperature....
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type...
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type Si Fig. B2 (a). If the dopant concentrations of the n layer and the p-type silicon are 6x101" cm and 8x10 cm respectively, calculate the built-in potential of the p-n junction at room temperature (300 K) 15 (3 marks) (b). Due to overheating of the silicon sample, the diode has an operation temperature of 200 °C and...
Problem 4: Narrow-Base Diode Consider an ideal pn* step-junction Si diode maintained at 300K with cross-sectional...
Problem 4: Narrow-Base Diode Consider an ideal pn* step-junction Si diode maintained at 300K with cross-sectional area A = 104cm2. The doping concentration on the p-type side is Na= 1017 cm3 (uncompensated). (The n-type side is degenerately doped.) The electron recombination lifetime in the p-type region is tn = 10-6 s. The width of the quasi-neutral p-type region is 1 um, for VA=0 V. a Is this a narrow-base diode? Justify your answer. b) Calculate the diode saturation current Io....
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the rev...
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the reverse breakdown voltage is 45 V. and the depletion widths (on the n-side and on the p-side) 3. Calculate the built-in voltage 19 in a silicon pn Junction with Na = 5x101 /cc and Nd = 1 x 10 /cc given that the junction is reverse biased at 5 V. /mi
2. Suppose you have a silicon wafer...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
A p-n junction is created by doping the right side of a piece of silicon with...
A p-n junction is created by doping the right side of a piece of silicon with 1014 atoms/cm3 of phosphorus and the left side with 1018 atoms/cm3 of boron. Assume that the dopants are fully ionized, and assume the junction is at x = 0 with x+ pointed to the right. a) Plot by hand (roughly to scale) an energy band diagram of the junction and label EGAP, EC, EV, EF and EFi. Using the effective density of states, calculate...
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor...
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor concentration of 2E18/cm^3 and the N-side has a uniform donor concentration of 2E15/cm^3. (a) Find the built-in voltage, V of the P-N junction at 300K. (b) Find the width of the depletion regions in the P and N regions of the transition region for zero reverse bias and for 5V reverse bias. (c) What is the depletion capacitance per unit area with zero reverse...
A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3. a)...
A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3. a) What breakdown mechanism do you expect will be dominant in this device? Explain. b) Find the approximate breakdown voltage for this diode. c) Calculate the depletion width at the breakdown voltage. d) What is the maximum magnitude of the electric field in the depletion region at the breakdown voltage?
Your supervisor tasked you to design a square cross-section silicon p-n junction diode with the following specifications: 1. Intrinsic concentration at 300K: n; = 1.5x 101° /cmº. 2. p-side doping: N = 1018/cm. 2. n-side doping: N = 1021/cm. 3. QNR length: W=W, = 1 um. p (a) Determine the sidelength so that the turn-on voltage of the designed diode to be 0.7V if the current rating of the diode is to be specified as 1 mA at room temperature....
B2 Consider a diode formed by making a p-n junction structure in a silicon sample as shown in Fig. B2. nt laver p-type Si Fig. B2 (a). If the dopant concentrations of the n layer and the p-type silicon are 6x101" cm and 8x10 cm respectively, calculate the built-in potential of the p-n junction at room temperature (300 K) 15 (3 marks) (b). Due to overheating of the silicon sample, the diode has an operation temperature of 200 °C and...
Problem 4: Narrow-Base Diode Consider an ideal pn* step-junction Si diode maintained at 300K with cross-sectional area A = 104cm2. The doping concentration on the p-type side is Na= 1017 cm3 (uncompensated). (The n-type side is degenerately doped.) The electron recombination lifetime in the p-type region is tn = 10-6 s. The width of the quasi-neutral p-type region is 1 um, for VA=0 V. a Is this a narrow-base diode? Justify your answer. b) Calculate the diode saturation current Io....
2. Suppose you have a silicon wafer containing a p n junction. Design the doping level on the n-side so that the reverse breakdown voltage is 45 V. and the depletion widths (on the n-side and on the p-side) 3. Calculate the built-in voltage 19 in a silicon pn Junction with Na = 5x101 /cc and Nd = 1 x 10 /cc given that the junction is reverse biased at 5 V. /mi
2. Suppose you have a silicon wafer...
Assume a p-n step junction in silicon wi concentration of 2x1016,c? and the n-type material doped at 3X10-s,cm3 The intrinsic carrier density is 1.25X101°/cm and all dopants are fully ionized Assume that the effective density of states for silicon is 3.3x10 cm3 for the conduction band and 1.75x101 cm for the valence band. Assume that the temperature is 300K and silicon relative permittivity of 11.7 a. Compute the hole concentration on the n-side and electron concentration th the p-type material...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor concentration of 2E18/cm^3 and the N-side has a uniform donor concentration of 2E15/cm^3. (a) Find the built-in voltage, V of the P-N junction at 300K. (b) Find the width of the depletion regions in the P and N regions of the transition region for zero reverse bias and for 5V reverse bias. (c) What is the depletion capacitance per unit area with zero reverse...
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