Optics Problem. Please Help! I. The reflectivity of silicon at 633 nm is 35% and the...
(3) A 850-nm laser beam of irradiance (intensity) 10 W/m² is incident upon a silicon (Si). sample. The absorption coefficient a is 1000 cm". Calculate the thickness in microns (um) for which the transmitted irradiance is 0.5 W/m². Neglect reflections. (6 pts.)
2-1: GaAs has a refractive index of 3.68 and an absorption coefficient of 1.3x10 m' at 800 nm. Calculate the transmission coefficient and optical density of a GaAs plate of thickness 2.0 micrometers 2-2: The complex dielectric function of a metal at IR frequency can be described by the following: w, +i Eow where E, is the relative static dielectric constant, o is the w and is the angle frequency. Estimate the reflectivity of a silver mirror electrical conductivity, at...
Surface Recombination: Suppose I have a sample of 10 μm thick silicon illuminated under 775 nm wavelength light (absorption coefficient 10' cm) at an intensity of 50 mW/cm2. The surface recombination velocity and bulk minority carrier lifetime are 10 em/s (for both respectively. Assume Δη and Δp are » no or po- surfaces) and 10 us, Why is surface recombination referred as a velocity? What is the estimated short circuit current assuming no bulk or surface recombination and perfect transmittance...
Theory section is below for the equations
PRELAB Read the theory section below. Calculate the photon wavelength in nm corresponding to a photon energy equal to the theoretical band gap energy of S1.121 eV and GaAs, 1.422 eV. These will be used to set the monochromator. THEORY One of the most important characteristics of a semiconductor is its band gap energy Eg Whereas an electron in an isolated atom has discrete energy levels, an electron in a semiconductor crystal has...