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State the Key ditterencé between these two types of n-MOSFEIs 2 d) You are asked to design a symmetric complementary metal oxide JA semiconductor (CMOS) inverter. Assume the mobilities of electrons and holes are Hn-545 cm2 / Vs and Hp 130 cm2 / Vs respectively, the threshold voltages for p- and n-MOSFETs equal, VTn VTpl 0.7 V, VDD 5 V, and aspect ratio for the p-MOSFET (WIL), 8. MOSFET which 8 What is the minimum aspect ratio (W/L)n for an n- would meet this requirement? Is the CMOS inverter a ratioless or ratioed logic circuit? Explain your reasoning with the aid of diagrams. i) ii) Total 30

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Answer #1

For symetric cmos, the rise time and fall time has to be equal.

So we need to select the W/L such that mobility* W/L is same for both transistor.

54-5 130 CMOS→ has Pullup netroor which are complemcnta to eac otthes 闪hrn Since both netoor bet we en

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