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A photovoltatic cell created from a semiconductor with band gap 1.4 eV is coated on its...

A photovoltatic cell created from a semiconductor with band gap 1.4 eV is coated on its top (light receiving) surface with another semiconductor with band gap 2.5 eV. Compute the maximum potential fraction of incident radiation converted to useful power if this cell is illuminated by light with wavelengths uniformly distributed between 400 and 700 nm. Assume the top semiconductor layer does not contribute to electrical power production.

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