Question

In practice, the doping in a semiconductor device is seldom constant with depth into the material. (a) (2 points) Show that the resistance of a semiconductor region of length L, width W, total depth D, a donor concentration ND(x), and no acceptors is 0 (b) (4 points) A typical result for thermally-diffused dopants is ND(x) = NDoe-az + NDB. Find an analytic expression for R. Hint: look at Exercise 3.1 on pages 83-84 of the text.]

Answer 1

Al The agenta, mad tendu ctan e et shelt pf thaknus dr レ pm Int sq rati on Dc L.

ver 2 -0( D