Question

EF11:3 HW#2.pdf The intrinsic carrier concentration of germenium (GE) is expressed as ni 1.66 x 1015T here Eg 0.66 eV. Calculate ni at 300K and 600K. b Determine the electron and hole concentrations if Ge is doped with P at a density of 5x1016 cm-3 Q2. Consider a pn junction in forward bias. a) b) To obtain a current of 1 mA with a voltage of 750 mV, how should Is be chosen? If the diode cross section area is now doubled, what voltage yields a current of 1 mA?. Q3. Fig. 1 shows two diodes with reverse saturation currents of Isi and Isz placed in series. Calculate ls, Voi, and Voz in terms of VB, Ist, and Isz D1 D D2 VR

Answer 1