***no need to compare to simple source follower***
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***no need to compare to simple source follower***
The amplifier shown in Fig. 12.90 provides a...
Design the source follower amplifier shown in Figure 1 to provide a midband gain of 0.5 and an up...
Design the source follower amplifier shown in Figure 1 to provide a midband gain of 0.5 and an upper 3 dB frequency of 1.5 MHz. Verify and compare the theoretical answer with the results produced by simulation using PSPICE A/D. Also, determine the lower 3 dB frequency of this amplifier. Rig C C2 sig Vo RG 200 kΩ s3.3 k Figure 1: Source Follower Amplifier
Design the source follower amplifier shown in Figure 1 to provide a midband gain of...
A MOSFET is wired as a common-source amplifier as shown below. The input voltage vIN is...
A MOSFET is wired as a common-source amplifier as shown below.
The input voltage vIN is the total of the source for
biasing the circuit at its operating point (vBIAS), and
a small signal ac source providing the signal that we want to
amplify (vin). The total output voltage is
vO.
a) Assume VDD = 5?, VIN = 2?, and ? = 4?Ω
in the circuit and the MOSFET parameters are K =
0.5??/?2, VTH 1?, and ? = 0.05V-1....
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V,...
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V, (W/L)-(W/L)2-5. VDD-GV and IBIAs= 1.0 mA. a) Assuming λ-0 for all transistors, find the required DC gate- source voltages of M1 and M2 (VGsı and VGs2, respectively) BIAS VD out b) Again assuming 0 M2 for all transistors, what is the minimum DC value of VouT for which the amplifier works in high-gain regime? (W/L)2 in M1 For parts c)-f), Assume -0.01 for all...
Consider a cylindrical capacitor like that shown in Fig. 24.6. Let d = rb − ra...
Consider a cylindrical capacitor like that shown in Fig. 24.6. Let d = rb − ra be the spacing between the inner and outer conductors. (a) Let the radii of the two conductors be only slightly different, so that d << ra. Show that the result derived in Example 24.4 (Section 24.1) for the capacitance of a cylindrical capacitor then reduces to Eq. (24.2), the equation for the capacitance of a parallel-plate capacitor, with A being the surface area of...
Design the source follower amplifier shown in Figure 1 to provide a midband gain of 0.5 and an upper 3 dB frequency of 1.5 MHz. Verify and compare the theoretical answer with the results produced by simulation using PSPICE A/D. Also, determine the lower 3 dB frequency of this amplifier. Rig C C2 sig Vo RG 200 kΩ s3.3 k Figure 1: Source Follower Amplifier
Design the source follower amplifier shown in Figure 1 to provide a midband gain of...
A MOSFET is wired as a common-source amplifier as shown below.
The input voltage vIN is the total of the source for
biasing the circuit at its operating point (vBIAS), and
a small signal ac source providing the signal that we want to
amplify (vin). The total output voltage is
vO.
a) Assume VDD = 5?, VIN = 2?, and ? = 4?Ω
in the circuit and the MOSFET parameters are K =
0.5??/?2, VTH 1?, and ? = 0.05V-1....
5) Consider the Cascode amplifier shown below. For the NMOS transistors, kn 0.2 mA/V2, Vr,-0.5 V, (W/L)-(W/L)2-5. VDD-GV and IBIAs= 1.0 mA. a) Assuming λ-0 for all transistors, find the required DC gate- source voltages of M1 and M2 (VGsı and VGs2, respectively) BIAS VD out b) Again assuming 0 M2 for all transistors, what is the minimum DC value of VouT for which the amplifier works in high-gain regime? (W/L)2 in M1 For parts c)-f), Assume -0.01 for all...
Consider a cylindrical capacitor like that shown in Fig. 24.6. Let d = rb − ra be the spacing between the inner and outer conductors. (a) Let the radii of the two conductors be only slightly different, so that d << ra. Show that the result derived in Example 24.4 (Section 24.1) for the capacitance of a cylindrical capacitor then reduces to Eq. (24.2), the equation for the capacitance of a parallel-plate capacitor, with A being the surface area of...
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