Solution:
Given that
Given:
KVL:
Collector junction is forward biased.
Transistor is in saturation region.
KVL :
KVL:-
2. (20 points) In the circuit shown below the silicon transistor has B=70. (a) Determine Ib,...
3. For the circuit shown a. Determine the levels of IB, Ic and Vce for the circuit shown. b. Change B to 150 (36.4% increase), and calculate the new levels of IB, Ic and VCE. c. Determine the magnitude of the percentage change in Ic and VCE +24 V 470 k 2 B = 110
Problem 4 (20 %) For the circuit shown in Figure 4 determine IB, IC, and VC. Data VCC=9 V VBB=4 V R2= 165 k R1= 2.5 k Transistor Assume VBE ≈ 0.7 V and =150 Derive all the results. Give the answers with the preestablished prefix. FAVOR DIBUJAR LOS CIRCUITOS Problem 4 (206) For the circuit shown in Figure 4 determine IB, I, and Vc. Data Ve=9 V V=4V R = 165 kg R=2.5k_2 Transistor Assume VE 0.7 V and...
Problem: In the circuit shown in Figure 1, Vee = 1.2 V, Vcc = 20 V, Rp = 60 kN, Rc = 2 k. The input signal is a sinusoidal voltage given by Vin(t) = 0.2 sin(2000 ) V. The input and output characteristics of the transistor are provided on Page 2. (1) Find Ig, Ic and Vce. (30 points) Hint: Use the load line method. (Vor.) and (Vce: 1c) are the operating points of the transistor in the input...
The component values for the npn-transistor amplifier circuit are R = 665 Q, Vcc= 20 V, VB= 2.4 V, and RB= 85k a) The graphon the last page shows the characteristics for the transistor in the above circuit Construct the load line for th is transistor circuit and draw it into the IC vs. VCE graph. Briefly state how you determine the load line. b) Determine the base current, assuming that the transistor is made of silicon. c) Determine the...
Problem 4a (15 points) For the transistor circuit shown in the figure, calculate the value of the output voltage given β 49 and VBE-0.7V. Problem 4b (10 points) The charge entering an electric element (part) is shown in the figure. Find the current at t- 1.5 sec, t-2.5 sec and t 10 sec 30 0 246810 12 Problem 3 (25 points) For the circuit shown in the Figure, use the Mesh Analysis method, to find the value of the branch...
1) Calculate the value of the base current IB. (in μA) 2) Calculate the value of the base collector current IC. (In mA) 3) Calculate the value of the collector-emitter voltage VCE. (In V) Required information In the circuit below: RB = 820 kN, Vcc = 12 V, RC = 3 kN2, and Bdc = 100. Note: The transistor is silicon. Vcc w Rc Re Bdc
np transistor with an α of 0.9925 is based in the circuit shown below with a (12 points) 3, A p base current of 40μΑ. Determine β, Ic, and IE. Ic V CE
(13 points) For the transistor in the circuit shown below, VBE(on) = 0.7 V, Vce(sat) = 0.2 V, and B = 100. Determine the value of the collector current. +5 V R=1.2 ko R =33 k2 -5 V
Experiment 2: Good biasing Set up the circuit with R2 12 k2, R RE 1 k, and Vcc 15 V 39 k2, Rc = 2 k?. Circuit Analysis: Compute Ic, I, and VCE PSpice Simulation: a) Simulate the circuit with PSpice (bias point details only) and compare values of Ic, IB, VCE, and VBE from PSpice simulations with your analytical calculations. b) Rerun your PSpice simulations for temperatures of 0 and 60°C. Make a table of Ic IB, VCE, and...
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the forward active mode, and B = 100 and VBE = 0.7V, calculate Base current 1B Collector current Ic (iii) Emitter current le (iv) Collector to emitter voltage Vce and (v) Voltage across the 2009 resistor v 3 80022 10 kV W VCE VBE مت + + 1 2001} 1 1