1) Calculate the value of the base current IB. (in μA)
2) Calculate the value of the base collector current IC. (In mA)
3) Calculate the value of the collector-emitter voltage VCE. (In V)
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1) Calculate the value of the base current
IB. (in μA)
2) Calculate the value of...
please choose one of the answer choices above. Must show all work, thank you Question 4...
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Question 4 CIRCUIT B2 (2.5 Marks) +Vcc Rc IRC Vic RB Ів Vc VB VE RE IE FIG.4: CIRCUIT B2 Statement: Sketching relevant output (Vc-Ic) characteristics decide on Q-point coordinates and DC load-line details: That is, determine DC operating conditions of the NPN-BJT/Si circuit of Fig.4 (denoting the type Circuit B2). Assume the following: Vcc= 24 volt; Rc = 5.0 k; RE = 1000 ohm; RB...
Download the datasheet for 2N3904 and find the value of Bp. (Hint: Use average value) Be=...
Download the datasheet for 2N3904 and find the value of Bp. (Hint: Use average value) Be= Voc +10 V RB We are going to consider the common emitter configuration circuit shown in the figure to test a 2N3904 npn Bipolar Junction Transistor (BJT) under DC bias conditions. Your circuit should place a fixed collector resistor, Rc, in the circuit to prevent the collector current, Ic, from exceeding 40 mA (for this, you know that the minimum value of is zero)....
please choose one of the answer choices above. Must show all work, thank you Question 3...
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Question 3 CIRCUIT B1 (2.5 Marks) + Vcc Rc IRC > IC RB Ів + VCE IE FIG. 3: CIRCUIT B1 Statement: Sketching relevant output (Vc-Ic) characteristics decide on Q-point coordinates and DC load-line details: That is, determine DC operating conditions of the NPN-BJT/Si circuit of Fig.3 (denoting the type Circuit B1). Assume the following: Vcc= 20 volt; Rc = 2.5 k; RB = 350 k...
please choose one of the answer choices above. Must show all work, thank you Question 2...
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Question 2 CIRCUIT A2 (2.5 Marks) + Ver Rc Ic с IR Fig. 2: CIRCUIT A.2 Statement: Sketching relevant output (Vc-Ic) characteristics decide on Q-point coordinates and DC load-line details: That is, determine DC operating conditions of the NPN-BJT/Si circuit of Fig.2 (denoting the type Circuit A2). Assume the following: Vcc= 24 volt; Rc = 5.0 k; RB = 1500 k and B = 125. Required...
Problem 5 Given the following circuit, assume the following parameters VBB IV, RB 220 k, RC...
Problem 5 Given the following circuit, assume the following parameters VBB IV, RB 220 k, RC = 2 k, VCC= 10 V, VBE(on)-0.7 V, and B 200 a) Calculate the base, collector, and emitter currents and the C-E voltage, also, calculate the transistor power dissipation b) What transistor configuration does the circuit resemble? Vcc=10V RC=2k Rg=220 kQ VCE VBB= 1V o + VRE IB
Electronics1. It's a multiple choices question. use the formula sheet if needed (the last picture). Question...
Electronics1. It's a multiple choices question. use the formula
sheet if needed (the last picture).
Question 3 CIRCUIT B1 (2.5 Marks) + VC Rc IRC < + RB IC IB V ce → IE FIG. 3: CIRCUIT B1 Statement: Sketching relevant output (V-Ic) characteristics decide on Q-point coordinates and DC load-line details: That is, determine DC operating conditions of the NPN-BJT/Si circuit of Fig.3 (denoting the type Circuit B1). Assume the following: Vcc= 20 volt; Rc = 2.5 k; RB...
miz 22 - Apr 14, 2020 Vo=8V on't forget units! For the npn BJT circuit at...
miz 22 - Apr 14, 2020 Vo=8V on't forget units! For the npn BJT circuit at right, calculate the base current is, collector current ic, emitter current is, and the collector-emitter voltage Vce. The forward current gain for the transistor is Br = 150. κι ΚΩ Vana_MW kr R, 100 k92 VRO i ic= 14702 _ VCE Vcc=6 V 32.2 k 2 R 120 k92 For the npn BJT circuit at right, calculate the value of Br so that the...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT)...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
5 نقاط For the circuit shown, If there is an added 1 K. Ohm resistor at...
5 نقاط For the circuit shown, If there is an added 1 K. Ohm resistor at the emitter terminal connected between Emitter and Ground, then calculate IB, IC, VCE, VB, and VC knowing that Vcc = 12 Volts, RB = 220 K. Ohm, RC = 4 K. Ohm, VBE = 0.7 volts, and Beta of transistor = 50 VCC Fig. 1 Rc im Ic RB ac HE output signal C2 IB + ac VCE input I signal G B +...
8. Find a) base current is , b) collector current ic and c) voltage between collector...
8. Find a) base current is , b) collector current ic and c) voltage between collector and emitter VCE Vcc=4.6V VCC RB=200k R WWW RRC=lk B=100 n-p-n BJT
please choose one of the answer choices above.
Must show all work, thank you
Question 4 CIRCUIT B2 (2.5 Marks) +Vcc Rc IRC Vic RB Ів Vc VB VE RE IE FIG.4: CIRCUIT B2 Statement: Sketching relevant output (Vc-Ic) characteristics decide on Q-point coordinates and DC load-line details: That is, determine DC operating conditions of the NPN-BJT/Si circuit of Fig.4 (denoting the type Circuit B2). Assume the following: Vcc= 24 volt; Rc = 5.0 k; RE = 1000 ohm; RB...
Download the datasheet for 2N3904 and find the value of Bp. (Hint: Use average value) Be= Voc +10 V RB We are going to consider the common emitter configuration circuit shown in the figure to test a 2N3904 npn Bipolar Junction Transistor (BJT) under DC bias conditions. Your circuit should place a fixed collector resistor, Rc, in the circuit to prevent the collector current, Ic, from exceeding 40 mA (for this, you know that the minimum value of is zero)....
please choose one of the answer choices above.
Must show all work, thank you
Question 3 CIRCUIT B1 (2.5 Marks) + Vcc Rc IRC > IC RB Ів + VCE IE FIG. 3: CIRCUIT B1 Statement: Sketching relevant output (Vc-Ic) characteristics decide on Q-point coordinates and DC load-line details: That is, determine DC operating conditions of the NPN-BJT/Si circuit of Fig.3 (denoting the type Circuit B1). Assume the following: Vcc= 20 volt; Rc = 2.5 k; RB = 350 k...
please choose one of the answer choices above.
Must show all work, thank you
Question 2 CIRCUIT A2 (2.5 Marks) + Ver Rc Ic с IR Fig. 2: CIRCUIT A.2 Statement: Sketching relevant output (Vc-Ic) characteristics decide on Q-point coordinates and DC load-line details: That is, determine DC operating conditions of the NPN-BJT/Si circuit of Fig.2 (denoting the type Circuit A2). Assume the following: Vcc= 24 volt; Rc = 5.0 k; RB = 1500 k and B = 125. Required...
Problem 5 Given the following circuit, assume the following parameters VBB IV, RB 220 k, RC = 2 k, VCC= 10 V, VBE(on)-0.7 V, and B 200 a) Calculate the base, collector, and emitter currents and the C-E voltage, also, calculate the transistor power dissipation b) What transistor configuration does the circuit resemble? Vcc=10V RC=2k Rg=220 kQ VCE VBB= 1V o + VRE IB
Electronics1. It's a multiple choices question. use the formula
sheet if needed (the last picture).
Question 3 CIRCUIT B1 (2.5 Marks) + VC Rc IRC < + RB IC IB V ce → IE FIG. 3: CIRCUIT B1 Statement: Sketching relevant output (V-Ic) characteristics decide on Q-point coordinates and DC load-line details: That is, determine DC operating conditions of the NPN-BJT/Si circuit of Fig.3 (denoting the type Circuit B1). Assume the following: Vcc= 20 volt; Rc = 2.5 k; RB...
miz 22 - Apr 14, 2020 Vo=8V on't forget units! For the npn BJT circuit at right, calculate the base current is, collector current ic, emitter current is, and the collector-emitter voltage Vce. The forward current gain for the transistor is Br = 150. κι ΚΩ Vana_MW kr R, 100 k92 VRO i ic= 14702 _ VCE Vcc=6 V 32.2 k 2 R 120 k92 For the npn BJT circuit at right, calculate the value of Br so that the...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
5 نقاط For the circuit shown, If there is an added 1 K. Ohm resistor at the emitter terminal connected between Emitter and Ground, then calculate IB, IC, VCE, VB, and VC knowing that Vcc = 12 Volts, RB = 220 K. Ohm, RC = 4 K. Ohm, VBE = 0.7 volts, and Beta of transistor = 50 VCC Fig. 1 Rc im Ic RB ac HE output signal C2 IB + ac VCE input I signal G B +...
8. Find a) base current is , b) collector current ic and c) voltage between collector and emitter VCE Vcc=4.6V VCC RB=200k R WWW RRC=lk B=100 n-p-n BJT
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