In a CMOS process, p-wells are made in lightly doped n-type 100mm diameter wafers having a resistivity of 0.2Ω.cm. Boron is implanted at 100keV energy through 370nm thick SiO2 with an ion current of 3μA for 90 seconds. Estimate the peak concentration of the implanted ions on the Si surface and the depth of the resulting junction.
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In a CMOS process, p-wells are made in lightly doped n-type 100mm diameter wafers having a...