Question

please whow all work, will give points

3. (a) Show that the direct band-to-band spontaneous emission rate integrated over all emission frequencies (photons per second per cm is given by provided that the Fermi level is within the semiconductor energy gap and away from the band edges. (b) Usingcq. (11-15)[i.e. np= 4(2xKT)3(mem)3/2 e p(듭) ], set the phenomenological equilibrium radiative recombination rate np n (photons per second per cm) (introduced in the Section of "Generation, Recombination, and Injection equal to the direct band-to-band result derived in (a) to obtain the expression for the radiative recombination coefficient (c) Use the result in (b) to find the value ofr, for GaAs at T-300K using m. 0.07mo, m, 0.5mo, t-0.4ns. Compare this with the value provided in the following table (see your lecture notes in Section 1.4, rel0"em'/s).

Answer 1