Given: A MOSFET is used in a switching power-pole found in Fig. 2-4a of the text....
A MOSFET and diode is used in a circuit shown in figure. The operating conditions are as follows: Input Voltage = VIN = 42 V, Io = 5A. Switching frequency fs = 400 kHz, Duty-cycle = D = 0.3. Diode Forward Voltage drop = 0.7V. Diode Peak Reverse Recovery Current = IRRM = 2.5 A. ON-state resistance of the MOSFET is RDS (on) = 25 mΩ. VGG as a step voltage between 0V and 10 V. MOSFET timings – Td...
0 9 A MOSFET is installed on a heat sink as shown in Fig. 2. The junction-to-case thermal resistance and the case-to- sink thermal resistance of the MOSFET are 1.6°C/W and 0.5°C/W respectively. Power loss of the MOSFET is 4W. If the maximum operating temperature of the MOSFET is 60°C and the temperature of the ambient environment is 30°C, calculate the minimum thermal resistance of the heat sink Pe 2
To design a high efficiency d.c., to d.c power converter with the given specifications min 10V max 15V nominal (regulated) 8V Input voltage: Output voltage: Nominal load current: 4A Inductor current ripple: 0.1A max Switching frequency: 30 kHz Output voltage ripple: 20 mV Define a suitable power circuit topology to meet the above specification? Sketch a circuit diagram of the chosen power circuit topology (a) Define the minimum and maximum duty cycles assuming that the control circuit keeps the output...
Referring to the following data sheets calculate the
switching loss for the IGBT:
Given, E = 400V, ID= 56A, Fs = 18.5kHz, VDS= 300V, VGS= +/- 18V,
RG = 22ohm.
Turn-on and Turn-off Energy: IGBT Eon E (mWs) Eoff 20 40 80 100 120 60 Ic (A) SKM50GB063D Values Unit Absolute Maximum Ratings Symbol Conditions IGBT VCES T = 25°C Ic To = 25 °C T = 150°C To = 75 °C Cnom | |сем CRM = 2xl nom 600...