Question

4- Consider a siliconpn-junction: a) Draw the hand diagram indicating the valence hand, the conduction hand, te rmi energy, and the buil- in potentiul, V ussuming that no voltuge is upplied across the junction. Indicate on this diagram approximately where the depletion region would be. (High level of acuracy is expected in this question). h) The doping is Na = 8x10 I cm? and N, = 2x10 lenN. At 300 K, what is the concentration of holes nn the p-side and the cncentration of holes (minority carriers) on th-ide? For silcon, n15xIm c Expluin what the diffusion current is and which way it is flowing for forwurd bias und reverse bias. d) How could you calculute the depletion width for this diode?

Answer 1