4. Consider an N channel MOSFET with the following parameters
L=1.5e-6m |
Na=1e16 |
W=25e-6m |
Tox=500 angstroms |
μn=600 |
Q’ss=10^11 |
?ms=-1.13 |
The saturation current density of the device at a gate bias of 2V, and 5V
Calculate the Vds(sat) at each of these gate voltages.
4. Consider an N channel MOSFET with the following parameters L=1.5e-6m Na=1e16 W=25e-6m Tox=500 angstroms μn=600...
Vgs for part b, not Vds 7. Consider an ideal n-channel silicon MOSFET with the following device parameters: VT --0.8 V, μ,-425 cm2V-1 s-1, tox-11 nm, w: 20 μm' and L-1.2 μm at T-300 K. nm, W- 20 a) Plot the drain current ID [mA] versus drain-source voltage Vos over the range 0 < VD 3V with VGS--0.8 V, VGs 0 V and Vas +0.8 V b) Plot root saturation current ID12(sat) [mA12] versus gate-source voltage V6s over the range...
An n-channel MOSFET has parameters VTN = 0.75 V, W = 40 µm, L = 4 µm, tox = 450 Å, and µn = 650 cm2/V-s. Determine the value of the drain current if the transistor is biased in the saturation region and VGS = 2 VTN.
Determine the maximum width of the depletion region, Wmax?? An n-channel metal-SiO2-Si MOSFET has the following parameters: 16 ст.3 NA = 4x 101 μη-I 000 cmr/(V.sec ) Фт.--0.925 eV, Gate oxide thickness tox-d= 3.0x10-6 cm Dimensions: L = 0.5x10-4 cm, Z = 1 x 104 cm Oxide Charges: Qs = 4.8x 10-8 Coul/cm, Qm= Q,-Qu = 0, Assume -9.65x10 cm3,T-300 K and KT-0.0259 eV cm . . An n-channel metal-SiO2-Si MOSFET has the following parameters: 16 ст.3 NA = 4x...