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4. Consider an N channel MOSFET with the following parameters L=1.5e-6m Na=1e16 W=25e-6m Tox=500 angstroms μn=600...

4. Consider an N channel MOSFET with the following parameters


L=1.5e-6m

Na=1e16

W=25e-6m

Tox=500 angstroms

μn=600

Q’ss=10^11

?ms=-1.13

  1. The saturation current density of the device at a gate bias of 2V, and 5V

  2. Calculate the Vds(sat) at each of these gate voltages.

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4. Consider an N channel MOSFET with the following parameters L=1.5e-6m Na=1e16 W=25e-6m Tox=500 angstroms μn=600...
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