If InP semiconductor Dopped si(10^16) into the position of indium, is it n semiconductor?
If InP semiconductor Dopped si(10^16) into the position of indium, is it n semiconductor?
Given the semiconductor indium antimonide (InSb): Suggest possible impurities that would make InSb n-type, p-type, isoelectronic, or amphoteric.
Complete the following table: Semiconductor Direct o Indirect? Eg (eV & J) Expected emitted Part of E&M wavelength. spectrum. Si GaAs InP GaAso.6Po4 GaAso.4Po.6 For the last two in the table, use the data from the graph on the GaAsP system Your solution will need to include your calculations and the use of the GaAsP graph to show how you determined the data for the two compound semiconductors for that system,
Complete the following table: Semiconductor Direct o Indirect? Eg...
QUESTION 43 (10 Marks) a) Calculate the conductivity of an intrinsic silicon (SI) semiconductor at 27°C if the hole mobility is 460 cm V's and the electron mobility is 1350 cm? Vis! Assume an intrinsic carrier density of 1.45 x 10 carriers/cm' and an electron charge of -0.16 x 10-4C (3 marks) b) Using Figure 8, calculate the conductivity of the Si intrinsic semiconductor if the temperature is increased to 150°C, assuming the same electron and hole mobilities (2 marks)...
Question 11 - M4 (16 marks) Consider the semiconductor materials Silicon (Si) and Germanium (Ge). Intrinsic Si has a bandgap of 1.11eV and Intrinsic Ge has a bandgap of 0.67eV. Extrinsic n-doped Ge can be made by adding a small amount of Antimony. 11.1) (5 marks) On a single plot of the 'number of charge carriers' on the y-axis versus 'temperature' on the x-axis, plot the temperature dependence of the number of charge carriers for Intrinsic Si, Intrinsic Ge and...
Problem 3: Semiconductor doping a) Explain why boron (B) is preferred over indium (In) as the dopant species to achieve highly conductive p-type silicon. b) At very high temperatures (e.g. >1000°C), the conductivity of silicon is not significantly affected by moderate doping (Na or No less than 101/cm), i.e. it is an intrinsic semiconductor. Explain why this is the case.
Problem 2. Silicon is used to dope a crystal of InP to a doping concentration of 2.5x10^16/cm3. Assume that all the silicon atoms displace only P atoms in the InP crystal. This is an example of “amphoteric” doping. (a) Explain amphoteric doping, and why it is important I specify which type of atoms in an InP crystal is replaced by the Si atoms that are used for doping. (b) In this situation, state if the doped InP is n-type or...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy E, and the Fermi energy E. 1. 2 marks Find an expression for Ee -Ef, i.e, the difference between the conduction band edge energy and the Fermi energy in terms of the donor concentration ND. 4 marks Determine the concentration of donor impurity atoms that must be added to silicon so that Ec- E0.2 eV. 3 marks
1. Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy Ec and the Fermi energy Ep 2 marks Find an expression for Ec - Ep, i.e, the difference between the conduction band edge energy and the Fermi energy in terms of the donor concentration Np. 4 marks Determine the concentration of donor impurity atoms that must be added to silicon that Ec Ef = 0.2 eV So 4 marks
5. Complete the following table: Expected emitted Part of E&M wavelength. Semiconductor Direct or Indirect? E (eV & J) spectrum. Si GaAs InP GaAso4Po6 For the last two in the table, use the data from the graph on the GaAsP system discussed in the "Bandgap Engineering" slides.