A particular InGaAs pin photodiode has a bandgap energy of 0.74 eV. Show that the cutoff wavelength of this device is 1678 nm.
A particular InGaAs pin photodiode has a bandgap energy of 0.74 eV. Show that the cutoff...
LiF has a Schottky formation energy of 2.6 eV and a bandgap of 12 eV. At 500 C, estimate the relative concentrations of ionic and electronic defects and determine which are dominant on an absolute concentration basis.
LiF has a Schottky formation energy of 2.6 eV and a bandgap of 12 eV. At 500 °C, estimate the relative concentrations of ionic and electronic defects and determine which are dominant on an absolute concentration basis.
Consider a typical optical receiver that contains a InGaAs pin photodiode, a load resistor, and an amplifier. The receiver has the following parameters at the wavelength 1.15e-5 m: The dark current is 5.0 nA, the quantum efficiency is 0.85, and the surface leakage current is negligible. The incident optical power is 3 mW, load resistance is 50 ohm, and the effective noise bandwidth of the receiver is 1 GHz. (1) Determine the photocurrent Iph . (2) Calculate...
The work function for silver is 4.73 eV. (a) Find the cutoff wavelength for silver. nm (b) What is the lowest frequency of light incident on silver that releases photoelectrons from its surface? Hz (c) If photons of energy 5.87 eV are incident on silver, what is the maximum kinetic energy of the ejected photoelectrons? eV
The work function for iron is 4.50 eV. (a) Find the cutoff wavelength for iron. nm (b) What is the lowest frequency of light incident on iron that releases photoelectrons from its surface? Hz (c) If photons of energy 6.27 eV are incident on iron, what is the maximum kinetic energy of the ejected photoelectrons? eV
The work function for iron is 4.50 ev. (a) Find the cutoff wavelength for iron. nm (b) What is the lowest frequency of light incident on iron that releases photoelectrons from its surface? Hz (c) If photons of energy 5.94 eV are incident on iron, what is the maximum kinetic energy of the ejected photoelectrons? ev Need Help? Read It
QUESTION 9 If a semiconductor with a larger bandgap than Si is used in a single junction photovoltaic cell, which of the following (may be more than one) will be true? The efficiency of the cell will increase. The cell will be less effective at converting IR radiation from the sun to electricity. The semiconductor will not require doping. The cell will be more effective at converting higher energy solar photons (corresponding to its band gap) to electricity. QUESTION 10...
An InGaAs laser diode has a band-gap energy of 1.85 eV. Find the emission wavelength for the laser in nanometre. F Select one: a. 670.2703 stion b. 520.5489 C. 845 d. 353.5478
If the binding energy for a particular metal is 1.38 eV, what is the longest wavelength of light (in nm) that can eject an electron from the metal at a speed of 2.89×105 m/s?
Example Key Parameters A silicon solar cell (bandgap 1.12 eV) is uniformly illuminated by monochromatic light of wavelength 600 nm and intensity 40 mW/cm2. Given that its external quantum efficiency at this wavelength is 0.9 the ideality factor is 1.5, and the dark saturation current density is 3 pA/cm2 i calculate the short circuit current of the cell if its area is 2 cmA2 calculate the open circuit voltage iii) fill factor iv) energy conversion efficiency