A GaAs n-channel, depletion-mode MESFET has a gate length of 1 um, a channel thickness of 0.30 im...
3. For an n-channel MOSFET with gate oxide (SiO2) thickness of 30 nm, threshold voltage of 0.7 V, Z = 30 um, and length of the device is 0.9 μm, calculate the drain current for VG-3 V and VD-0.2 V. Assume that the electron channel mobility is 200 cm'/V-sec. What will be the required drain current to drive the MOS in saturation region? How the drain current will change if HfO2 with Ks 25 will be used as a gate...
a. Given a CMOS inverter has gate width Wn-20μm, channel length Lp-La- 2μm, process parameter Kp = 2.0x10-5A/V2, Kn = 5.0x10-5A/V2, find the value of (5 marks) the gate width Wp for Bp n b. Given that the sheet resistance of the polysilicon is 4.0d the capacitance per unit area of the polysilicon is 0.1fF/um2. Calculate the time constant of a polysilicon polygon with structure shown in the figure, width equals to 3A and the (6 marks) corner resistance is...