2. Reverse engineer the layout shown below. Draw a) a stick diagram corresponding to the layout S$
2, From the layout below draw the Stick Diagram and circuit using transistors. KEY BLACK ■ CON. BLUEMETAL RED POLY DIFF. THINOX GREEN = YELLOW -"? IMP. " L :W LW (1:2)
2, From the layout below draw the Stick Diagram and circuit using transistors. KEY BLACK ■ CON. BLUEMETAL RED POLY DIFF. THINOX GREEN = YELLOW -"? IMP. " L :W LW (1:2)
1- VLSI question
Froim the layout below draw the Stick Diagram and circuit using transistors. KEY BLACK CON BLUEMETAL REDPOLY GREEN ㅡㅡㅡㅡㅡ THINOX DIFF YELLOWIMP L:W L:W (1:2)
Sketch the layout of this CMOS static 3-input NAND gate using stick diagram. The stick diagram should include the N-diffusion (green), P-diffusion (yellow), polysilicon (red), metal areas (blue), and contact (black 1) layers should be implemented between a power (V and ground rail. (3 markah/marks)
The layout of a CMOS complex logic circuit is given in the Figure 1. 1. Draw the corresponding circuit diagram; and a. b. Calculate the (W/equivaientfall the nMOS and PMOS transistors for simultaneous equivalent switching of all the inputs, assuming that (W/L), = 25 for all pMOS transistors and W-20 for all nMOS transistors F(A,B,C,D,E ) A B Figure 1
The layout of a CMOS complex logic circuit is given in the Figure 1. 1. Draw the corresponding circuit diagram;...
2. (10 points) Consider the beam shown below: (a) draw the complete shear diagram with corresponding labels and units (b) draw the complete moment diagram with corresponding labels and units (c) find the magnitude of maximum compressive normal stress (d) find the magnitude of the maximum tensile normal stress Give the value and location for all quantities along the beam and on the cross section. NOTE: The moment of inertia is I, = 99.75 in* and the centroid is given....
2. (10 points) Consider the beam shown below: (a) draw the complete shear diagram with corresponding labels and units (b) draw the complete moment diagram with corresponding labels and units (c) find the magnitude of maximum compressive normal stress (d) find the magnitude of the maximum tensile normal stress Give the value and location for all quantities along the beam and on the cross section. NOTE: The moment of inertia is I, = 99.75 in* and the centroid is given....
2. (10 points) Consider the beam shown below: (a) draw the complete shear diagram with corresponding labels and units (b) draw the complete moment diagram with corresponding labels and units (c) find the magnitude of maximum compressive normal stress (d) find the magnitude of the maximum tensile normal stress Give the value and location for all quantities along the beam and on the cross section. NOTE: The moment of inertia is 12 = 99.75 in4 and the centroid is given....
7. (20pt) For the following Stick Diagram: • (a) Draw the Circuit Diagram. • (b) Which two transistors have shared diffusion? • (c) Write the Boolean Function Equation for OUT. (d) Draw the Logic Diagram using NAND, NOR, INV. (e) Which important items and layers may be missing in the below stick diagram? E D A B C Vdd P+ Active Out N* Active Gnd Metal Poly
Please with details and explanations
The layout of a CMOS complex logic circuit is given in the Figure 1. 4. (10 Marks) Draw the corresponding circuit diagram; and cdlculate the (equivaent of all the nMOS and PMOS transistors for simultaneous switching of all the inputs, assuming that (W/L)p = 15 for all pMOS transistors and (w/2), a. 5 for all nMOS (10 Marks) transistors Vdd PMOS IL NMOS Figure 1
The layout of a CMOS complex logic circuit is given...
The layout of a CMOS complex logic circuit is given in the
Figure 1. Draw the corresponding circuit diagram; and
Calculate the (W⁄L)_equivalent of all the nMOS and PMOS
transistors for simultaneous switching of all the inputs, assuming
that (W⁄L)p =20 for all pMOS transistors and (W⁄L)n =15 for all
nMOS transistors.
Windows VDD poly silicon n+ diffussion OUT P+ diffusion Centact GND
Windows VDD poly silicon n+ diffussion OUT P+ diffusion Centact GND