A 6T SRAM cell is fabrication in a 0.13-um CMOS process for which Vo ,-1.2 V , V-0.4 V , and μ.ca-430 μ AV . the inverters utilize (W/L-1 . Each of the bit lines has a 2-pf capacitance to ground...

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o2) 0.3 C- ㅏ.ea.พาโหไท 了 30 Y (3 67.52HA

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