Question

6. Assume that an ideal silicon p-njunction has ND-10'scrn". N-1016 cm-3, t/tel 0%, and a device area of 1.2x10 cm2. De-21 cm/sec, D-10 cm/sec, G 10 cmsn-1010 cm-3, Es-1.05 101 F/em. (20 pts). Assume an ideal solar cell at 300K. IV characteristics can be given by J Js ekT 1)-Isc under the illumination. (20 pts) (a) Calculate the Jsc (15 pts)

Answer 1

Given -lhat An ,deal silicon p-n Junction has ND=ldemą 다cm 3.st , DF : 100 cro3 | £6 : 1. c5 x ιδ,2. Flen?. Tdcal sola cell at zook NOw a) To find Jsc 2- + Dp.bi Jsc 16 lo lolg チ、346 x ,0-10-6-3+20-13 C Scaned with CamScanner

MA Ms 16 ..เรา o 1972 0838 . O. 026 Х 32, 23 Scanned with CS Cams.canner