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Consider the manufacture of photovoltaic silicon where a thin sheet of silicon is pulled from the pool of molten material very slowly and is subjected to an ambient temperature of T 627°C within the growth chamber. The silicon sheet is Wsi =85 mm wide and tsi =150um thick. A convection coefficient of h 7.5 W/m2.K is associated with the exposed surfaces of the silicon sheet when it is inside the growth chamber. Calculate the maximum allowable velocity of the silicon...
1 & 3
1. Describe the processes using flow chart to obtain electronic grade silicon wafer from silicon dioxide. 3. Describe four processes of growth of single crystals.
1. Describe the processes using flow chart to obtain electronic grade silicon wafer from silicon dioxide. 3. Describe four processes of growth of single crystals.
(20 pts.) Question 3 Al um film of silicon dioxide is to be etched with an etch rate of 800 nm/min. Process data show that the thickness may vary up to 3% and the etch rate may vary up to 5 %. (i) specify the time duration that verifies the etching process clears the oxide film from all the exposed areas of the wafer; (ii) For this time duration, calculate how much undercut will occur at the top and bottom...
Give the number of neutrons in each naturally occurring isotope of silicon: silicon-28, silicon-29, silicon-30.
If a culture has an instantaneous growth rate constant of 0.03235129 min , what is the doubling time of the culture? Express your answer in minutes using exponential notation. o 48.2 minutes would be 4.82e1 . Round vour answer to two decimal places o 32.67 minutes would be 2.27e1
The growth of Pseudomonas bacteria is modeled as a first-order process with k = 0.035 min−1 at 37°C. The initial Pseudomonas population density is 1.0 ×103 cells/L. Enter your answers in scientific notation. (a) What is the population density after 3.0 h? _____×10____cells/L (b) What is the time required for the population to go from 1.0 ×103 to 4.0 ×103 cells/ L? _____×10____ min
Silicon atom density is 5x1022 cm-3, i.e., number of silicon atoms per cubic centimeter of silicon. Use your silicon crystal structure knowledge to prove it.
A c100-oriented silicon erystal is etched in a KOH solution through a 1.5 um x 15 Hm window defined in silicon dioxide. The etch rate normal to (100) planes is 0.6 pm/min. The etch rate ratios are 100:16:1 for the (100):(110):(111) planes. Show the etched profile after 20 seconds, 40 seconds, and 60 seconds.
-Uses of silicon in electronics -Uses of silicon in everyday life
Draw the structure of Silicon along the (100) projection. It is observed that Silicon adopts the F d-3 m structure (No. 227), and that there are 8 atoms in the unit cell. If the lattice parameter of Silicon is 5.431 A, calculate the density of silicon.